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PDF 1N6263W Datasheet ( Hoja de datos )

Número de pieza 1N6263W
Descripción DIODE
Fabricantes WEJ 
Logotipo WEJ Logotipo

Total 2 Páginas
		
1N6263W Hoja de datos, Descripción, Manual
RoHS
1N6263W
DFeatures
· Low Forward Voltage Drop
T· Guard Ring Construction for Transient
Protection
.,L· Fast Switching Time
· Low Reverse Capacitance
· Surface Mount Package Ideally Suited for
OAutomatic Insertion
SOD-123
2.70
3.70
IC CMaximum Ratings @ TA = 25°C unless otherwise specified
NCharacteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
ODC Blocking Voltage
RMS Reverse Voltage
RForward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
T@ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
COperating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IF
IFSM
Pd
RqJA
Tj, TSTG
1N6263W
60
42
15
50
2.0
400
375
-65 to +175
Unit
V
V
mA
mA
A
mW
K/W
°C
EElectrical Characteristics @ TA = 25°C unless otherwise specified
LCharacteristic
EReverse Breakdown Voltage (Note 2)
Reverse Leakage Current
Forward Voltage Drop
JJunction Capacitance
EReverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
60
¾
¾
V IR = 10mA
IRM ¾
¾ 200 nA VR = 50V
VFM
¾
¾
0.41
1.0
V
IF = 1.0mA
IF = 15mA
Cj ¾ 2.0 ¾ pF VR = 0V, f = 1.0MHz
trr
¾ 1.0 ¾
ns
IF = IR = 5.0mA
Irr = 0.1 x IR, RL = 100W
WNote: 1. Valid provided that terminals from the case are maintained at ambient temperature.
2. Test period <3000ms.
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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