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PDF 1N5711W Datasheet ( Hoja de datos )

Número de pieza 1N5711W
Descripción DIODE
Fabricantes WEJ 
Logotipo WEJ Logotipo

Total 2 Páginas
		
1N5711W Hoja de datos, Descripción, Manual
RoHS
1N5711W
TDFeatures
.,L· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Fast Switching Time
O· Low Reverse Capacitance
· Surface Mount Package Ideally Suited for
IC CAutomatic Insertion
SOD-123
2.70
3.70
ONMaximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
RPeak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
TRMS Reverse Voltage
Maximum Forward Current
CPower Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
EOperating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
Pd
RqJA
Tj, TSTG
1N5711W
70
49
15
250
600
-65 to +175
Unit
V
V
mA
mW
K/W
°C
LElectrical Characteristics @ TA = 25°C unless otherwise specified
ECharacteristic
Reverse Breakdown Voltage
Reverse Leakage Current
JForward Voltage Drop
Junction Capacitance
EReverse Recovery Time
Symbol Min Typ Max
V(BR)R
70
¾
¾
IR ¾ ¾ 200
VFM
¾
¾
0.41
1.00
Cj ¾ ¾ 2.0
trr ¾ ¾ 1.0
WNote: 1. Valid provided that terminals from the case are maintained at ambient temperature.
Unit
V
nA
V
pF
ns
Test Condition
IR = 10mA
VR = 50V
IF = 1.0mA
IF = 15mA
VR = 0V, f = 1.0MHz
IF = IR= 5.0mA
Irr = 0.1 x IR, RL = 100W
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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