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PDF LL4148 Data sheet ( Hoja de datos )
| Número de pieza | LL4148 | |
| Descripción | High Speed SMD Switching Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Small Signal Product
CREAT BY ART
LL4148/LL4448/LL914B
Taiwan Semiconductor
High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface device type mounting
- Matte Tin(Sn) terminal finish
- Pb free version and RoHS compliant
MECHANICAL DATA
- Case: Mini-MELF Package
- High temperature soldering guaranteed: 270°C/10s
- Polarity: Indicated by black cathode band
- Weight: 31mg (approximately)
MINI MELF
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
PD
VRRM
500
75
Reverse Voltage
VR 75
Peak Forward Surge Current (Note 1)
IFSM
2
Non-Repetitive Peak Forward Current
Mean Forward Current
IFM
IF(AV)
450
150
Forward Continuous Current
IF 150
Repetitive Peak Forward Current
IFRM
450
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
RθJA
TJ , TSTG
300
-65 to +175
PARAMETER
SYMBOL
Reverse Breakdown Voltage
IR=100μA
IR=5μA
V(BR)
Forward Voltage
LL4448, LL914B
LL4148
LL4448, LL914B
Reverse Leakage Current
IF=5 mA
IF=50 mA
IF=100 mA
VR=20V
VR=75V
VF
IR
Junction Capacitance
Reverse Recovery Time
VR=0
(Note 3)
f=1.0MHz
CJ
trr
MIN
100
75
-
0.62
-
-
-
-
-
-
MAX
-
-
-
0.72
1
1
25
5
4
4
Note 1: Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)
Note 2: Valid provided that electrodes are kept at ambient temperature
Note 3: Reverse recovery test conditions : IF=IR=10mA, RL=100Ω, IRR=1mA
UNIT
mW
V
V
A
mA
mA
mA
mA
oC/W
oC
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S1408022
Version: J15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LL4148.PDF ] | |
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