DataSheet.es    

PDF 2SC5751 Datasheet ( Hoja de datos )

Número de pieza 2SC5751
Descripción NPN SILICON RF TRANSISTOR
Fabricantes Renesas 
Logotipo Renesas Logotipo

Total 16 Páginas
		
2SC5751 Hoja de datos, Descripción, Manual
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5751
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
2SC5751
2SC5751-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
6.0
2.0
50
205
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15657EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001

1 page

2SC5751 pdf
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
GP
20
VCE = 3.2 V
250
f = 0.9 GHz
ICq = 8 mA (RF OFF) 200
15 150
10
5
0
–20
Pout
–15 –10
100
ηC
50
IC
–5 0
0
5
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 250
VCE = 2.8 V
f = 1.8 GHz
20 ICq = 8 mA (RF OFF) 200
GP
15
150
10 Pout
100
ηC
5 50
0
–15 –10
–5
0
IC
0
5 10
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 250
VCE = 3.2 V
f = 2.4 GHz
20 ICq = 8 mA (RF OFF) 200
15 GP
150
10
5
0
–15
100
Pout
ηC
50
–10 –5
0
5
Input Power Pin (dBm)
IC
0
10
2SC5751
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25 250
VCE = 3.2 V
f = 1.8 GHz
20 ICq = 8 mA (RF OFF) 200
GP
15
150
10
5
0
–15
Pout 100
–10 –5
ηC
50
IC
0
0 5 10
Input Power Pin (dBm)
Data Sheet P15657EJ1V0DS
5

5 Page

2SC5751 arduino
2SC5751
VCE = 3 V, IC = 10 mA, ZO = 50
Frequency
(GHz)
S11
MAG.
ANG.
(deg.)
S21
MAG.
ANG.
(deg.)
0.1
0.755
23.6 23.975
162.2
0.2
0.694
46.8 21.403
146.0
0.3
0.631
68.0 18.920
132.6
0.4
0.574
84.8 16.444
122.3
0.5
0.528
99.0 14.401
113.8
0.6
0.494
111.8 12.621
107.0
0.7
0.469
122.9 11.242
100.7
0.8
0.454 132.2 10.049
95.6
0.9
0.442 141.0
9.150
90.8
1.0
0.433 148.6
8.348
86.4
1.1
0.431 155.6
7.678
82.6
1.2
0.428 162.2
7.086
78.9
1.3
0.431 168.2
6.579
75.1
1.4
0.434 173.5
6.127
71.7
1.5
0.438 178.7
5.740
68.5
1.6
0.442
177.0
5.400
65.1
1.7
0.450
172.5
5.087
62.0
1.8
0.454
168.6
4.798
59.1
1.9
0.459
165.0
4.549
56.1
2.0
0.464
161.3
4.305
52.9
2.1
0.475
158.7
4.119
50.1
2.2
0.482
155.1
3.918
47.2
2.3
0.488
152.3
3.756
44.4
2.4
0.492
149.6
3.586
41.5
2.5
0.504
147.1
3.448
38.7
2.6
0.510
144.5
3.311
36.1
2.7
0.520
142.1
3.179
33.4
2.8
0.532
139.5
3.052
30.5
2.9
0.545
137.6
2.921
27.9
3.0
0.542
134.9
2.827
25.7
4.0
0.615
114.9
1.999
2.7
S12
MAG.
ANG.
(deg.)
0.011
0.022
0.029
0.033
0.037
0.039
0.041
0.043
0.045
72.6
65.2
56.9
51.2
47.2
43.7
42.9
41.4
40.9
0.046
0.048
0.049
0.051
0.053
0.055
0.056
0.058
0.060
0.062
41.2
40.9
41.5
41.2
41.6
42.1
42.7
42.8
43.1
43.2
0.064
0.066
0.069
0.071
0.073
0.076
0.079
0.082
0.087
0.089
43.6
44.2
44.7
45.0
45.2
45.3
45.4
45.6
45.0
42.4
0.089
0.108
41.9
36.8
S22
MAG.
ANG.
(deg.)
0.958
0.876
0.790
0.702
0.633
0.573
0.528
0.489
0.462
12.9
24.4
33.1
39.9
44.5
48.4
51.3
54.1
56.4
0.438
0.421
0.405
0.395
0.385
0.378
0.369
0.366
0.358
0.359
59.1
61.4
64.1
66.6
69.2
71.9
74.7
77.8
80.8
84.2
0.354
0.357
0.357
0.363
0.364
0.371
0.375
0.382
0.387
0.382
87.5
91.2
94.4
98.0
101.0
104.7
107.6
111.4
115.2
118.9
0.377
0.414
121.4
152.0
K MAG/MSG
(dB)
0.183
0.232
0.303
0.395
0.483
0.574
0.654
0.738
0.801
0.871
0.925
0.984
1.023
1.067
1.094
1.132
1.159
1.188
1.203
1.230
1.222
1.234
1.229
1.245
1.223
1.217
1.195
1.155
1.157
1.211
1.245
33.28
29.97
28.21
26.93
25.93
25.07
24.35
23.68
23.09
22.57
22.06
21.58
20.17
19.08
18.34
17.61
17.03
16.41
15.93
15.38
15.09
14.65
14.35
13.93
13.73
13.44
13.22
13.08
12.76
12.25
9.70
Data Sheet P15657EJ1V0DS
11

11 Page


PáginasTotal 16 Páginas
PDF Descargar[ 2SC5751.PDF ]

Enlace url


Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SC5750NPN SILICON RF TRANSISTORRenesas
Renesas
2SC5751NPN SILICON RF TRANSISTORRenesas
Renesas
2SC5752NPN SILICON RF TRANSISTORNEC
NEC
2SC5753NPN SILICON RF TRANSISTORCEL
CEL

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


www.DataSheet.es    |   2019   |  Privacy Policy  |  Contacto  |  Buscar