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PDF BC847S Data sheet ( Hoja de datos )
| Número de pieza | BC847S | |
| Descripción | NPN Silicon Multi-Chip Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC847S (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Elektronische Bauelemente
RoHS Compliant Product
BC847S
NPN Silicon
Multi-Chip Transistor
SOT-363
* Features
Power dissipation
PCM : 0.3 W (Tamp.= 25OC)
Collector current
ICM : 0.2 A
Collector-base voltage
V(BR)CBO : 50 V
Operating & Storage junction Temperature
OO
Tj, Tstg : -55 C~ +150 C
C 1 B2 E2
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
E 1 B1
C2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE(1)
VCE(sat)
VCE(sat)(2)
VBE
VBE(2)
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=10mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=20mA , f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50 V
45 V
6V
15 nA
110 630
0.25 V
0.65 V
0.7 V
0.77 V
200 MHz
2 pF
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC847S.PDF ] | |
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