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PDF DMN2501UFB4 Data sheet ( Hoja de datos )
| Número de pieza | DMN2501UFB4 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN2501UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on) max
0.4Ω @ VGS = 4.5V
0.5 Ω @ VGS = 2.5V
0.7 Ω @ VGS = 1.8V
ID
TA = +25°C
1.5A
1.3A
1.1A
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
Drain
X2-DFN1006-3
ESD PROTECTED
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2501UFB4-7
DMN2501UFB4-7B
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
DMN2501UFB4
Document number: DS35824 Rev. 5 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
1 page  
0.25
0.20
0.15
0.10
VGS = 4.5V
ID = 1.0A
VGS = 8.0V
ID = 1A
0.05
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 On-Resistance Variation with Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
8
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
7
6 VDS = 10V
ID = 250mA
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge
DMN2501UFB4
1.2
1.0
0.8 ID = 1mA
ID = 250µA
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
1,000
100
10
Ciss
Coss
Crss
f = 1MHz
1
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
100
10 PW = 10µs
RDS(on)
Limited
1
DC
PW = 10s
PW = 1s
0.1 TJ(max) = 150°C
TA = 25°C
VGS = 8V
Single Pulse
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
0.01 DUT on 1 * MRP Board
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMN2501UFB4
Document number: DS35824 Rev. 5 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
5 Page | ||
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