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PDF DMN2028USS Data sheet ( Hoja de datos )
| Número de pieza | DMN2028USS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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Product Summary
V(BR)DSS
20V
RDS(on) max
20mΩ @ VGS= 4.5V
28mΩ @ VGS= 2.5V
ID max
TA = +25°C
(Note 6)
9.8A
8.3A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery charging
Power management functions
DC-DC converters
Portable power adaptors
SO-8
ESD PROTECTED TO 2kV
Top View
S
S
S
G
DMN2028USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Output Leakage
ESD Protected Up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
D
DG
D
D Gate Protection
SDiode
Top View
Equivalent Circuit
Ordering Information (Note 4)
Product
DMN2028USS-13
Marking
N2028US
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
N2028US
YY WW
14
Chengdu A/T Site
DMN2028USS
Document number: DS32075 Rev. 4 - 2
85
N2028US
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
N2028US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 7
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October 2013
© Diodes Incorporated
1 page  
DMN2028USS
0.030
0.025
0.030
0.025 VGS = 4.5V
0.020
0.015
0.010
0.005
VGS = 2.5V
VGS = 4.5V
0.020
0.015
0.010
0.005
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
1.6
5 10 15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
0
0
0.030
5 10 15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
1.4
1.2
1.0 VGS = 2.5V
ID = 5A
0.8 VGS = 4.5V
ID = 10A
0.6
-50 -25
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
3.0
0.025
0.020
0.015
VGS = 2.5V
ID = 5A
0.010
0.005
VGS = 4.5V
ID = 10A
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
20
2.5 16
2.0
12 TA = 25°C
1.5
8
1.0 ID = 1mA
0.5 ID = 250µA
4
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMN2028USS
Document number: DS32075 Rev. 4 - 2
5 of 7
www.diodes.com
October 2013
© Diodes Incorporated
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| PDF Descargar | [ Datasheet DMN2028USS.PDF ] | |
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