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Número de pieza | DMN2014LHAB | |
Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2014LHAB (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DMN2014LHAB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on) max
13mΩ @ VGS = 4.5V
14mΩ @ VGS = 4.0V
17mΩ @ VGS = 3.1V
18mΩ @ VGS = 2.5V
28mΩ @ VGS = 1.8V
ID
TA = +25°C
9.0A
8.7A
8.0A
6.7A
6.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Power Management Functions
• Battery Pack
• Load Switch
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2030-6
• Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.012 grams (approximate)
U-DFN2030-6
D1 D2
G1 G2
ESD PROTECTED TO 2kV
Bottom View
Top View
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2014LHAB-7
DMN2014LHAB-13
Case
U-DFN2030-6
U-DFN2030-6
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN2014LHAB
Document number: DS36441 Rev. 2 - 2
24W
24W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 14 for 2014)
WW = Week code (01 to 53)
1 of 6
www.diodes.com
June 2014
© Diodes Incorporated
1 page DMN2014LHAB
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A1
A
(Pin #1 ID)
D
e
A3
Seating Plane
E E2
D2 L
U-DFN2030-6
Type B
Dim Min Max Typ
A 0.55 0.65 0.60
A1 0 0.05 0.02
A3 -
- 0.15
b 0.25 0.35 0.30
D 1.95 2.05 2.00
D2 1.40 1.60 1.50
E 2.95 3.05 3.00
E2 1.74 1.94 1.84
e-
- 0.65
L 0.28 0.38 0.33
Z-
- 0.20
All Dimensions in mm
Z (4x)
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
G
X1
Y2
Y
Y1
Dimensions
C
G
X
X1
X2
Y
Y1
Y2
Value
(in mm)
0.650
0.150
0.400
1.600
1.700
0.530
1.940
3.300
CX
DMN2014LHAB
Document number: DS36441 Rev. 2 - 2
5 of 6
www.diodes.com
June 2014
© Diodes Incorporated
5 Page |
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DMN2014LHAB | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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