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PDF DG808BC45 Data sheet ( Hoja de datos )
| Número de pieza | DG808BC45 | |
| Descripción | Gate Turn-off Thyristor | |
| Fabricantes | Dynex | |
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DG808BC45
Gate Turn-off Thyristor
DS5914-2 July 2014 (LN31731)
FEATURES
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
High Surge Current Capability
Turn-off Capability Allows Reduction in
Equipment Size and Weight. Low Noise
Emission Reduces Acoustic Cladding Necessary
For Environmental Requirements
KEY PARAMETERS
ITCM
VDRM
I(AV)
dVD/dt*
dIT/dt
3000A
4500V
780A
1000V/µs
400A/µs
APPLICATIONS
Variable speed AC motor drive inverters (VSD-
AC) including Traction drives
Uninterruptable Power Supplies
High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Outline type code: C
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
DG808BC45
Repetitive Peak Off-state
Voltage VDRM (V)
4500
Repetitive Peak Reverse
Voltage VRRM (V)
16
Conditions
Tvj = 125°C, IDM =100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
ITCM
IT(AV)
IT(RMS)
Parameter
Repetitive peak controllable on-state current
Mean on-state current
RMS on-state current
Conditions
VD = 66%VDRM, Tj = 125°C,
dIGQ/dt = 40A/ s, CS = 4 F
THS = 80°C, Double side cooled.
Half sine 50Hz
THS = 80°C, Double side cooled.
Half sine 50Hz
Max.
3000
780
1225
Units
A
A
A
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1 page  
SEMICONDUCTOR
DG808BC45
40
35
30
25
20
15
10
5
0
0.0001
0.001
0.01
0.1
Pulse duration - (s)
1
Fig.6 Surge (non-repetitive) on-state current vs time
3500
3000
2500
Conditions:
Tj = 125oC; IFGM = 40A
Cs = 4.0uF; Rs = 10 Ohms
dIT/dt = 300A/uS
dIFG/dt = 40A/uS
2000
VD = 3000V
VD = 2000V
1500
1000
VD = 1000V
500
0
0
1000
2000
3000
On-state current IT -(A)
Fig.7 Turn-on energy vs on-state current
4500
4000
3500
3000
2500
Conditions:
Tj = 125oC; IT = 3000A
Cs = 4.0uF
Rs = 10 Ohms
dIT/dt = 300A/uS
dIFG/dt = 40A/uS
2000
1500
1000
VD = 3000V
VD = 2000V
500 VD = 1000V
0
0 20 40 60 80 100
Peak forward gate current IFGM - (A)
Fig.8 Turn-on energy vs forward gate current
3500
3000
2500
Conditions:
IT = 3000A;Tj = 125oC
CS = 4.0uF;RS = 10 Ohms
IFGM = 40A;diFG /dt =
40A/us
VD = 3000V
2000
1500
VD = 2000V
1000
500
VD = 1000V
0
0 100 200 300 400
Rate of rise of on-state current diT/dt - (A/us)
Fig.9 Turn-on energy vs rate of rise of on-state current
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5 Page 
SEMICONDUCTOR
DG808BC45
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1400g
Clamping force: 31.5 ±10%
Lead coaxial, length: 600mm
Package outline type code: C
Fig.31 Package outline
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet DG808BC45.PDF ] | |
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