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PDF JCS1HN60C Data sheet ( Hoja de datos )
| Número de pieza | JCS1HN60C | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS1HN60C
主要参数 MAIN CHARACTERISTICS
ID 0.5 A
VDSS 600 V
Rdson（@Vgs=10V） 15 Ω
Qg 3.6 nC
TO-92
封装 Package
用途
z 高频开关电源
z 电子镇流器
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
产品特性
z低栅极电荷
z低 Crss (典型值 2.8pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 2.8pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS1HN60TC-O-T-N-A JCS1HN60C
JCS1HN60TC-R-T-N-A JCS1HN60C
封装
Package
TO-92
TO-92
无卤素
Halogen Free
否 NO
YES NO
包装
Packaging
编带 Brede
编带 Brede
器件重量
Device Weight
0.216 g(typ)
0.216 g(typ)
版本：201311A
1/9
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS1HN60C
On-Region Characteristics
Transfer Characteristics
VGS
Top 15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
1
10
150℃
1
25℃
Notes：
1. 250μs pulse test
2. TC=25℃
0.1
1
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
16
Notes：
0.1 1.250μs pulse test
2.VDS=40V
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
15
14 VGS=20V
13 VGS=10V
1
150℃
12
25℃
11 Note ：T j=25℃
10
0.0 0.5 1.0 1.5 2.0 0.1
ID [A]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD [V]
Capacitance Characteristics
Gate Charge Characteristics
10 VDS=300V
8 VDS=120V
6
VDS=480V
4
2
0
0123
QgToltal Gate Charge [nC]
4
版本：201311A
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet JCS1HN60C.PDF ] | |
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