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PDF RFCM3316 Data sheet ( Hoja de datos )

Número de pieza RFCM3316
Descripción POWER DOUBLER MODULE
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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No Preview Available ! RFCM3316 Hoja de datos, Descripción, Manual

RFCM3316
45-1218MHZ GAAS/GAN
POWER DOUBLER MODULE
The RFCM3316 is a Power Doubler amplifier SMD Module. The
part employs GaAs pHEMT die and GaN HEMT die, has high
output capability, and is operated from 45MHz to 1218MHz. It
provides excellent linearity and superior return loss performance
with low noise and optimal reliability.
DC current of the device can be externally adjusted for optimum
distortion performance versus power consumption over a wide
range of output level.
Current Temperature
Setting
Sensing V+
INPUT
RFCM3316
OUTPUT
Package: 9 pin,
9.0 mm x 8.0 mm x 1.375mm
Features
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
Extremely High Output Capability
22.5dB Min. Gain at 1218MHz
450mA Max. at 24VDC
Temperature Sensing Feature
Applications
45MHz to 1218MHz CATV
Amplifier Systems
Functional Block Diagram
Ordering Information
RFCM3316SB
RFCM3316SQ
RFCM3316SR
RFCM3316TR7
RFCM3316TR13
RFCM3316PCBA-410
Sample bag with 5 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
7” Reel with 500 pieces
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS141006
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFCM3316 pdf
RFCM3316
RFCM3316 Temperature Sensing Feature
The RFCM3316 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the
output transistor stage. Within the application circuit the NTC is built in a voltage divider. The output voltage of the
voltage divider (Vt) can be correlated to the module backside temperature.
Module Backside Temperature versus Vt (typical values)
Temperature [°C]
120
110
100
90
80
70
60
50
40
30
20
750
1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000
Vt [mV]
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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