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PDF DMN2005UFG Data sheet ( Hoja de datos )
| Número de pieza | DMN2005UFG | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN2005UFG
20V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
V(BR)DSS
20V
RDS(ON) max
4.6mΩ @ VGS = 4.5V
8.7mΩ @ VGS = 2.5V
ID max
TA = 25°C (t<10s)
24.1A
17.5A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
POWERDI3333-8
S Pin 1
S
S
G
D
D
D
D
Bottom View
• Low RDS(ON) – ensures on state losses are minimized
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• 100% UIS & Rg tested
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI®3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
D
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2005UFG-7
DMN2005UFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N05
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
N05= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
1 of 7
www.diodes.com
May 2014
© Diodes Incorporated
1 page  
25
20
15
TA = 150°C
TA = 125°C
10
TA = 85°C
5
TA = 25°C
TA = -55°C
00 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
6
VDS = 16V
ID = 27A
4
2
00 20 40 60 80 100 120 140 160 180
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
100000
10000
DMN2005UFG
f = 1MHz
Ciss
1000
Crss
Coss
100
0
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
RDS(ON)
Limited
10
DC
PW = 10s
PW = 1s
1 PW = 100ms
PW = 10ms
PW = 1ms
0.1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.01
0.1
PW = 100µs
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 132°C/W
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100 1000
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
5 of 7
www.diodes.com
May 2014
© Diodes Incorporated
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