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PDF RGT8BM65D Data sheet ( Hoja de datos )
| Número de pieza | RGT8BM65D | |
| Descripción | 650V 4A Field Stop Trench IGBT | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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RGT8BM65D
650V 4A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
4A
1.65V
62W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-252
(2)
(1)
(3)
lInner Circuit
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Taping
330
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
16
2,500
Welder
Taping Code
TL
Marking
RGT8BM65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
8
4
12
7
4
12
62
31
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.A
1 page  
RGT8BM65D
lElectrical Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.2 Collector Current vs. Case Temperature
10
8
6
4
2
Tj≦175ºC
VGE≧15V
0
0 25 50
75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
100
10µs
10
1 100µs
0.1
0.01
1
TC= 25ºC
Single Pulse
10
100 1000
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
16
14
12
10
8
6
4
2 Tj≦175ºC
VGE=15V
0
0 200 400 600 800
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.05 - Rev.A
5 Page 
RGT8BM65D
lInductive Load Switching Circuit and Waveform
Data Sheet
D.U.T.
D.U.T.
VG
Fig.23 Inductive Load Circuit
IF trr , Qrr
diF/dt
Irr
Fig.25 Diode Reverce Recovery Waveform
Gate Drive Time
VGE 10%
90%
IC
td(on)
tr
ton
VCE
90%
td(off)
10%
tf
toff
VCE(sat)
Fig.24 Inductive Load Waveform
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
2014.05 - Rev.A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RGT8BM65D.PDF ] | |
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