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PDF DMN1019UVT Data sheet ( Hoja de datos )
| Número de pieza | DMN1019UVT | |
| Descripción | 12V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN1019UVT
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
12V
RDS(ON) MAX
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
ID
TA = +25°C
10.7A
9.8A
9.1A
8.0A
5.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Load Switch
DC-DC Converters
Power Management Functions
Features
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TSOT26
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
TSOT26
D1
6D
D
ESD PROTECTED
Top View
D2
G3
5D
4S
Top View
Pin Configuration
G
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN1019UVT-7
DMN1019UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
DMN
DMN = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2015
C
Jan
1
2016
D
Feb Mar
23
2017
E
Apr
4
2018
F
May Jun
56
2019
G
2020
H
Jul Aug Sep
78
9
2021
I
2022
J
Oct Nov Dec
OND
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated
1 page  
100
RDS(ON)
Limited
10
1
0.1
0.01
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
TJ(Max)=150℃
TA=25℃
PW=1ms
PW=100µs
VGS=4.5V
Single Pulse
DUT on 1*MRP Board
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
1
100
DMN1019UVT
D=0.7
D=0.9
D=0.5
0.1 D=0.3
D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJA (t)=r(t) * RθJA
RθJA=107℃/W
Duty Cycle, D=t1 / t2
0.001
0.0001
0.001
0.01 0.1 1 10 100
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
1000
10000
DMN1019UVT
Document number: DS37506 Rev. 2 - 2
5 of 7
www.diodes.com
April 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN1019UVT.PDF ] | |
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