PDF DMN1019USN Data sheet ( Hoja de datos )

Número de pieza	DMN1019USN
Descripción	12V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes	Diodes
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No Preview Available ! Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description This new generation MOSFET has been designed to minimize the on- state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • Load Switch • DC-DC Converters • Power Management Functions SC59 DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SC59 • Case Material – Molded Plastic. UL Flammability Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.014 grams (approximate) D D G ESD PROTECTED Top View GS Top View Pin Configuration Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1019USN-7 DMN1019USN-13 Case SC59 SC59 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N7 = Product Type Marking Code N7 YM = Date Code Marking Y = Year ex: A = 2013 M = Month ex: 9 = September Date Code Key Year Code Month Code 2013 A Jan 1 2014 B Feb Mar 23 2015 C 2016 D Apr May Jun 456 2017 E 2018 F Jul Aug Sep 78 9 2019 G 2020 H Oct Nov Dec OND DMN1019USN Document number: DS36999 Rev. 2 - 2 1 of 6 www.diodes.com May 2014 © Diodes Incorporated 1 page 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 DMN1019USN 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.0001 0.001 RθJA(t) = r(t) * RθJA RθJA = 60°C/W Duty Cycle, D = t1/ t2 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A BC G H K N J DL M SC59 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D - - 0.95 G - - 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 α 0° 8° - All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C XE Dimensions Z X Y C E Value (in mm) 3.4 0.8 1.0 2.4 1.35 DMN1019USN Document number: DS36999 Rev. 2 - 2 5 of 6 www.diodes.com May 2014 © Diodes Incorporated 5 Page

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Número de pieza	Descripción	Fabricantes
DMN1019USN	12V N-CHANNEL ENHANCEMENT MODE MOSFET	Diodes

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