Datasheet BCW89 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BCW89	PNP General Purpose Transistors SMD Type TransistIoCrs PNP General Purpose Transistors BCW89 Features Low current (max. 100 mA). Low voltage (max. 60 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Collector-e	Kexin	transistor
2	BCW89	SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–	CDIL	transistor
3	BCW89	EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Super Mini Packaged Transistors for Hybrid circuits. For Complementary with NPN Type BCW71/72, BCV71. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage BCW69/70 BCW89 VCBO Collector-	KEC	transistor
4	BCW89	SILICON PNP TRANSISTORS BCW89 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW89 is a Silicon PNP Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose applications. MARKING CODE: H3	Central Semiconductor	transistor
5	BCW89	PNP general purpose transistor DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW89 PNP general purpose transistor Product speciﬁcation Supersedes data of 1997 Mar 11 1999 Apr 15 Philips Semiconductors Product speciﬁcation PNP general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (ma	NXP Semiconductors	transistor

BCW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BCW29	EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current	KEC	transistor
2	BCW29	PNP General Purpose Transistors SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle	Kexin	transistor
3	BCW29	Silicon Planar Epitaxial Transistor	Philips	transistor
4	BCW29	GENERAL PURPOSE TRANSISTOR BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device	Motorola Semiconductors	transistor
5	BCW29	SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2	CDIL	transistor
6	BCW29	PNP general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product speciﬁcation Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product speciﬁcation PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low v	NXP Semiconductors	transistor
7	BCW29	Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlus	Diotec Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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