(PDF) KDP620UL Datasheet - SILICON EPITAXIAL PIN TYPE DIODE

Número de pieza	KDP620UL
Descripción	SILICON EPITAXIAL PIN TYPE DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Array type (6 Diode in one package) Low Capacitance Low Series resistance KDP620UL SILICON EPITAXIAL PIN TYPE DIODE A TOP VIEW D 16 12 7 C BOTTOM VIEW MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA EQUTVALENT CIRCUIT (TOP VIEW) 12 7 D6 D5 D4 D1 D2 D3 16 SIDE VIEW DIM MILLIMETERS A 2.50 +_ 0.05 B 1.20 +_ 0.05 C 0.20 +_ 0.05 D 0.40 +_ 0.05 E 0.25 +_ 0.05 F 0.45 +_ 0.05 G Max 0.5 ULP-12 Marking Type Name P0 Lot No. D1,D2, D5, D6 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current Forward Voltage Total Capacitance Series Resistance IR VR=30V VF IF=10mA CT VR=1V, f=1MHz rs IF=10mA, f=100MHz ESD-Capability * C=200pF, R=0 , - Both forward and reverse direction 1 pulse * Failure cirterion : IR>100nA at VR=30V. MIN. - - - - TYP. - - - - MAX. 0.1 1.0 0.30 1.3 UNIT A V pF 100 - -V 2008. 1. 22 Revision No : 0 1/3 1 page

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PDF KDP620UL Data sheet ( Hoja de datos )