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PDF IRFH7191PBF Data sheet ( Hoja de datos )

Número de pieza IRFH7191PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFH7191PBF Hoja de datos, Descripción, Manual

VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
100
8.0
26
1.0
80
V
m
nC

A
 
FastIRFET™
IRFH7191PbF
HEXFET® Power MOSFET
  PQFN 5X6 mm
Applications
 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
 Secondary Side Synchronous Rectifier
 Hot Swap and Active O-Ring
Features
Low RDS(ON) (< 8.0m)
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
 
IRFH7191PbF
 
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7191TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
 
Max.
± 20
15
80
51
234
3.6
104
0.03
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 8
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September 08, 2014

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IRFH7191PBF pdf
 
1000
100
IRFH7191PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
0.1
1.0E-06
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 12. Typical Avalanche Current vs. Pulse Width
1.0E-02
20
18 ID = 48A
16
14
12 TJ = 125°C
10
8
6
4 TJ = 25°C
2
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 13. On–Resistance vs. Gate Voltage
1200
1100
1000
900
800
ID
TOP
3A
5A
BOTTOM 48A
700
600
500
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2014 International Rectifier
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September 08, 2014

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