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PDF IRFH6200TRPBF Data sheet ( Hoja de datos )

Número de pieza IRFH6200TRPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
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No Preview Available ! IRFH6200TRPBF Hoja de datos, Descripción, Manual

VDS
RDS(on) max
(@VGS = 4.5V)
(@VGS = 2.5V)
Qg (typical)
RG (typical)
ID
(@Tmb = 25°C)
20
0.99
1.50
155
1.3
h100
V
mΩ
nC
Ω
A
Applications
Charge and discharge switch for battery application
Load switch for 12V (typical) bus
Hot-Swap Switch
Features
Low RDSon (0.99mΩ)
Low Thermal Resistance to PCB (0.8°C/W)
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
IRFH6200TRPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Base Part Number
IRFH6200PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable part number
IRFH6200TRPbF
IRFH6200TR2PbF
Note
EOL Notice #259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ Tmb = 25°C
ID @ Tmb = 100°C
IDM
PD @TA = 25°C
PD @Tmb = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20
±12
49
40
100h
100h
400
3.6
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
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IRFH6200TRPBF pdf
IRFH6200TRPbF
4
ID = 50A
3
2
TJ = 125°C
1
TJ = 25°C
0
0 2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
1000
100
3500
3000
2500
ID
TOP 19A
21A
BOTTOM 30A
2000
1500
1000
500
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
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