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Número de pieza | IRFH4257DPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.70
9.7
25
Q2
25
1.80
23
25
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FastIRFET™
IRFH4257DPbF
HEXFET® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (9.7nC typical)
Low RDSON synchronous MOSFET (<1.8m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Dual PQFN 5X4 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
IRFH4257DPbF
Package Type
Dual PQFN 5mm x 4mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4257DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20
68 111
54
88
25
120
25
16
0.20
25
375
28
18
0.22
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RJC (Bottom) Junction-to-Case
RJC (Top) Junction-to-Case
RJA Junction-to-Ambient
RJA (<10s) Junction-to-Ambient
Notes through are on page 12
Q1 Max.
5.0
33
45
30
Q2 Max.
4.5
26
40
27
Units
°C/W
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September 15, 2014
1 page 100000
10000
1000
100
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100000
10000
1000
IRFH4257DPbF
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 25A
12.0
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20
QG, Total Gate Charge (nC)
25
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
100
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID = 25A
12.0 VDS=20V
10.0 VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
10 20 30 40 50
QG, Total Gate Charge (nC)
60
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
Limited by
Package
1
100µsec
1msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
10msec
DC
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
5 www.irf.com © 2014 International Rectifier
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
Limited by Package
1
100µsec
1msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
10msec
DC
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
Submit Datasheet Feedback
September 15, 2014
5 Page Dual PQFN 5x4 Package Details
IRFH4257DPbF
Dual PQFN 5x4 Part Marking
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
September 15, 2014
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRFH4257DPBF.PDF ] |
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