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PDF IRFH4255DPBF Data sheet ( Hoja de datos )

Número de pieza IRFH4255DPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
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No Preview Available ! IRFH4255DPBF Hoja de datos, Descripción, Manual

VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.60
10
30
Q2
25
2.10
23
30
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FastIRFET™
IRFH4255DPbF
HEXFET® Power MOSFET
  
 
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low RDSON synchronous MOSFET (<2.10m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
 
IRFH4255DPbF
Package Type
 
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4255DTRPbF
Absolute Maximum Ratings
  
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20  
64 105
51
84
30
120
31
20
0.25
30
420
38
24
0.30
-55 to + 150
Units
V
A 
W 
W/°C
°C  
Thermal Resistance
Parameter
RJC (Bottom) Junction-to-Case
RJC (Top) Junction-to-Case
RJA Junction-to-Ambient
RJA (<10s) Junction-to-Ambient
Notes through are on page 12
 
Q1 Max.
4.0
20
34
24
 
Q2 Max.
3.3
12
31
19
 
Units
°C/W
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IRFH4255DPBF pdf
  
100000
10000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
100000
10000
1000
IIRRFFHH44225555DDPPbbFF
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 30A
12.0
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG, Total Gate Charge (nC)
30
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10 Limited by package
100µsec
1 1msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1 1
10msec
DC
10 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
100
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
12.0
ID= 30A
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
10 20 30 40 50
QG, Total Gate Charge (nC)
60
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100µsec
10 Limited by Package
1
1msec
10msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1 1
DC
10
VDS, Drain-to-Source Voltage (V)
100
Fig 12. Maximum Safe Operating Area
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IRFH4255DPBF arduino
 
Dual PQFN 5x6 Outline “H” Package Details
4
INDEX AREA
(D/2xE/2)
D
A
B
C
A1
TOP VIEW
SIDE VIEW
IRFH4255DPbF
L1
7x L2
D2
PIN#1 ID
R0.30
8x b
D1
1.15
8x K
0.48
SyTmhbiockl ness
A
A1
b
D
E
e
D1
E1
D2
E2
K
L1
L2
D im en sion T able
V : V e ry T h in
M IN IM U M
0 .8 0
0 .0 0
0 .3 0
2.4 2
4 .4 1
0 .7 8
4 .01
0 .2 0
1.6 7
0.4 0
N O M IN A L M A X IM U M
0 .9 0
1.0 0
0 .0 2
0 .0 5
0 .4 0
0 .5 0
6 .0 0 B S C
5 .0 0 B S C
1.2 7 B S C
2 .5 7
2 .6 7
4 .5 6
4 .66
0 .9 3
1.0 3
4 .16 4 .26
--- ---
1.7 7
0 .5 0
1.8 7
0 .6 0
Dual PQFN 5x6 Outline “H” Part Marking
INTERNATIONAL
RECTIFIER LOGO
NOTE
6
1.08 0.94
BOTTOM VIEW
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
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April 14, 2014

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