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Número de pieza | IRFB7545PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFB7545PBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
D
G
S
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
Gate
StrongIRFET™
IRFB7545PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
60V
4.9m
5.9m
95A
GDS
TO-220AB
D
Drain
S
Source
Base part number Package Type
IRFB7545PbF
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7545PbF
14
ID = 57A
12
10 TJ = 125°C
8
6
4 TJ = 25°C
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 5, 2014
1 page 1000
100 TJ = 175°C
TJ = 25°C
10
VGS = 0V
1.0
0.2 0.6 1.0 1.4 1.8
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
80
Id = 1.0mA
78
76
74
72
70
68
66
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
16
14
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
12
Vgs = 8.0V
Vgs = 10V
10
IRFB7545PbF
100µsec
100 1msec
10 OPERATION
IN THIS
AREA
LIMITED BY
1 RDS(on)
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-10
0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
60
Fig 12. Typical Coss Stored Energy
8
6
5 www.irf.com
4
0 40 80 120 160 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
© 2014 International Rectifier
Submit Datasheet Feedback
November 5, 2014
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFB7545PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFB7545PBF | Power MOSFET ( Transistor ) | International Rectifier |
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