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PDF TGA2817-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2817-SM | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• Military Radar
• Commercial Radar
• Wideband Amplifiers
TGA2817-SM
S-Band 60 W GaN Power Amplifier
Product Features
• Frequency Range: 2.9 – 3.5 GHz
• Pout: > 48 dBm (at Pin = 24 dBm)
• Large Signal Gain: > 24 dB (at Pin = 24 dBm)
• PAE: > 54 % (at Pin = 24 dBm)
• Bias: VD = 28 V, IDQ = 200 mA, VG = −2.8 V (Typ)
• Package Dimensions: 7.00 x 7.00 x 0.85 mm
General Description
TriQuint’s TGA2817-SM is a high-power, S-band
amplifier fabricated on TriQuint’s TQGaN25 0.25um
GaN on SiC production process. Covering 2.9-3.5
GHz, the TGA2817-SM provides > 48 dBm of
saturated output power and > 24 dB of large-signal
gain while achieving > 54 % power added efficiency.
The TGA2817-SM can also support a variety of
operating conditions to best support system
requirements. With good thermal properties, it can
support a range of bias voltages and will perform well
under pulse applications. The TGA2817-SM is
matched to 50 ohms with integrated DC blocking
caps on both I/O ports. It is ideal for use in both
commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation board available on request.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
1
2
3
4
5
RF In 6
RF In 7
8
9
10
11
12
36
35
34
33
32
31 RF Out
30 RF Out
29
28
27
26
25
13 14 15 16 17 18 19 20 21 22 23 24
Pad Configuration
Pad Number
Symbol
6, 7 RF Input
13, 48
VG1
15, 46
VD1
17, 44
VG2
23, 38
VD2
30, 31
RF Output
1-5, 8-12, 14, 16, 18-22,
24-29, 32-37, 39-43, 45, 47, GND
49
Ordering Information
Part ECCN Description
TGA2817-SM
3A001.b.2.a
S-Band 60 W GaN
Power Amplifier
TGA2817-SM_EVB
EAR99
TGA2817-SM
Evaluation Board
Datasheet: Rev - A 03-11-15
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
Typical Performance
Test conditions unless otherwise noted: Temp. = 25 °C
40 Gain vs. Frequency vs. IDQ
VD = 28 V, T = 25 °C
35
30
25
20
15
10
200 mA
5 400 mA
600 mA
0
2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
Frequency (GHz)
4.0
TGA2817-SM
S-Band 60 W GaN Power Amplifier
0 Input RL vs. Freq. vs. IDQ
VD = 28 V, T = 25 °C
-5
-10
-15
-20
-25 200 mA
400 mA
600 mA
-30
2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
Frequency (GHz)
0 Output RL vs. Freq. vs. IDQ
VD = 28 V, T = 25 °C
-5
-10
-15
-20
200 mA
-25 400 mA
600 mA
-30
2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
Frequency (GHz)
Datasheet: Rev - A 03-11-15
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2817-SM
S-Band 60 W GaN Power Amplifier
Mechanical Drawing and Pad Description
Dimensions are in mm.
Pad No.
1-5, 8-12, 14, 16, 18-
22, 24-29, 32-37, 39-
43, 45, 47, 49
6, 7
Symbol
GND
RF Input
13, 48
VG1
15, 46
VD1
17, 44
VG2
23, 38
VD2
30, 31
RF Output
Description
Ground connection.
50 Ohm RF input. Pad is capacitively coupled to block on-chip DC
voltages.
1st Stage Gate Voltage; bias network is required; must be biased from
both sides (VG1 and VG2 can be tied together in application)
1st Stage Drain Voltage; bias network is required; must be biased from
both sides (VD1 and VD2 can be tied together in application)
2nd Stage Gate Voltage; bias network is required; must be biased from
both sides (VG1 and VG2 can be tied together in application)
2nd Stage Drain Voltage; bias network is required; must be biased from
both sides (VD1 and VD2 can be tied together in application)
50 Ohm RF output. Pad is capacitively coupled to block on-chip DC
voltages. Pad is DC grounded.
Datasheet: Rev - A 03-11-15
© 2014 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2817-SM.PDF ] | |
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