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PDF TGA2814-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2814-SM | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• Military Radar
• Commercial Radar
• Wideband Amplifiers
TGA2814-SM
3.1 – 3.5 GHz 80W GaN Power Amplifier
Product Features
• Frequency Range: 3.1 – 3.5 GHz
• Output Power: 49.5 dBm (at Pin = 25 dBm)
• Power Gain > 24 dB (at Pin = 25 dBm)
• PAE: 55% (at Pin = 25 dBm)
• Bias: VD = 30 V, IDQ = 200 mA, VG = –2.90 V Typical
• Package Dimensions: 7.0 x 7.0 x 0.85 mm
General Description
TriQuint’s TGA2814-SM is a high-power, S-band amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process (TQGaN25).The TGA2814-SM covers 3.1 – 3.5
GHz and provides > 80 W of saturated output power, 24
dB of large-signal gain, and achieves 55 % power-added
efficiency.
The TGA2814-SM can also support a variety of operating
conditions to best support system requirements. With
good thermal properties, it can support a range of bias
voltages and performs well under pulse operation.
With DC blocking capacitors on both RF ports, which are
matched to 50 ohms, the TGA2814-SM is ideal for both
commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation boards are available on request.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
1
2
3
4
5
RF In 6
RF In 7
8
9
10
11
12
Pad Con13f1ig4 1u5r1a6 t1i7o1n8 19 20 21 22 23 24
Pad No.
1-5, 8-12, 14, 16, 18-21, 24-
29, 32-37, 40-43, 45, 47, 49
6, 7
13, 48
15, 46
17, 44
22, 23, 38, 39
30, 31
Symbol
GND
RF Input
VG1
VD1
VG2
VD2
RF Output
36
35
34
33
32
31 RF Out
30 RF Out
29
28
27
26
25
Ordering Information
Part
TGA2814-SM
TGA2814-
SM_EVB
ECCN
3A001.b.2.a
EAR99
Description
3.1 – 3.5 GHz 80W
GaN Power Amplifier
TGA2814-SM
Evaluation Board
Datasheet: Rev - 02-16-15
© 2015 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2814-SM
3.1 – 3.5 GHz 80W GaN Power Amplifier
Typical Performance – Small Signal
31 Gain vs. Frequency vs. VD
IDQ = 400 mA, T = 25 °C
29
27
25
23
21
19
24 V 30 V
17
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Frequency (GHz)
40 Gain vs. Frequency vs. IDQ
VD = 30 V, T = 25 °C
35
30
25
20
15
10
5
100 mA
200 mA
400 mA
800 mA
0
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Frequency (GHz)
0 Input RL vs. Frequency vs. VD
IDQ = 400 mA, T = 25 °C
-5
-10
-15
-20
-25
24 V 30 V
-30
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Frequency (GHz)
0 Input RL vs. Frequency vs. IDQ
VD = 30 V, T = 25 °C
-5
-10
-15
-20
-25 100 mA 200 mA
400 mA 800 mA
-30
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Frequency (GHz)
0 Output RL vs. Frequency vs. VD
IDQ = 400 mA, T = 25 °C
-5
-10
-15
-20
-25
24 V 30 V
-30
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Frequency (GHz)
0 Output RL vs. Frequency vs. IDQ
VD = 30 V, T = 25 °C
-5
-10
-15
-20
-25 100 mA 200 mA
400 mA 800 mA
-30
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Frequency (GHz)
Datasheet: Rev - 02-16-15
© 2015 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Application Circuit
TGA2814-SM
3.1 – 3.5 GHz 80W GaN Power Amplifier
VG
R1
0Ω
C1
10 uF
C11
1.0 uF
C3 1000 pF
C4 1000 pF 48 46 44
C5 1000 pF
VD
39 38
C6 1000 pF
C12
1.0 uF
J1
RF In
6,7
30,31
J2
RF Out
C13
1.0 uF
C2
10 uF
R2
0Ω
VG
C7 1000 pF 13 15 17
C8 1000 pF
22 23
C9 1000 pF
C14
1.0 uF
C10 1000 pF
VD
Bias-up Procedure
1. Set ID limit to 6 A, IG limit to 30 mA
2. Apply -5.0 V to VG
3. Apply +30 V to VD
4. Adjust VG more positive until IDQ = 200 mA (VG ~
–2.90 V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0 V. Ensure IDQ ~ 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Datasheet: Rev - 02-16-15
© 2015 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TGA2814-SM.PDF ] | |
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