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PDF TGA2814-CP Data sheet ( Hoja de datos )
| Número de pieza | TGA2814-CP | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Radar
TGA2814-CP
3.1 to 3.6 GHz, 80W GaN Power Amplifier
Product Features
Frequency Range: 3.1 – 3.6 GHz
Pout: 49 dBm at PIN = 27 dBm
PAE: 50 % Pulsed
Power Gain: 23 dB at PIN = 27 dBm
Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical,
pulsed (PW = 15 ms, DC = 30 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1
2
3
4
5
10
9
8
7
6
General Description
TriQuint’s TGA2814-CP is a packaged high-power
S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25
um GaN on SiC process. Operating from 3.1 to 3.6
GHz, the TGA2814-CP achieves 80 W saturated output
power, a power-added efficiency of 50 %, and power
gain of 23 dB.
The TGA2814-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under both short and long pulse
conditions. Both RF ports are internally DC blocked and
matched to 50 ohms allowing for simple system
integration.
The TGA2814-CP is ideally suited for both commercial
and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2814-CP
ECCN Description
3A001.b.2.a
3.1 – 3.6 GHz, 80 W
GaN Power Amplifier
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2814-CP
3.1 to 3.6 GHz, 80W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 30 V (PW = 15 ms, DC = 30 %), IDQ = 200 mA, VG = -3 V typical.
58
56
54
52
50
48
46
44
42
2.9
PAE vs. Frequency vs. VD
PIN = 27 dBm, Temp = 25 °C
24 V
28 V
30 V
32 V
3.1 3.3 3.5 3.7
Frequency (GHz)
3.9
24 Power Gain vs. Frequency vs. VD
22
20
18
16
14
2.9
24 V
28 V
30 V
32 V
PIN = 27 dBm, Temp = 25 °C
3.1 3.3 3.5 3.7
Frequency (GHz)
3.9
58
56
54
52
50
48
46
44
42
2.9
PAE vs. Frequency vs. Temp.
PIN = 27 dBm
-40 °C
25 °C
85 °C
3.1 3.3 3.5
Frequency (GHz)
3.7
3.9
Power Gain vs. Frequency vs. Temp.
24
PIN = 27 dBm
22
20
-40 °C
25 °C
18 85 °C
16
14
2.9
3.1 3.3 3.5 3.7
Frequency (GHz)
3.9
PAE vs. Input Power vs. Temp.
60
PW = 100 µsec, DC = 10%,
Freq = 3.3 GHz, Temp = 25 °C
50
40
30 -40 °C
25 °C
20 85 °C
10
0
0 5 10 15 20 25
Input Power (dBm)
30
30
27
24
21
18
15
12
9
6
3
0
0
Power Gain vs. Input Power vs. Temp.
-40 °C
25 °C
85 °C
PW = 100 µsec, DC = 10%,
Freq = 3.3 GHz, Temp = 25 °C
5 10 15 20 25 30
Input Power (dBm)
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2814-CP
3.1 to 3.6 GHz, 80W GaN Power Amplifier
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGA2814-CP to the board.
3. To improve the thermal and RF performance, we recommend the following:
a. Apply thermal compound or 4 mils indium shim between the package and the board.
b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim
between the heat sink and the board.
4. Apply solder to each pin of the TGA2814-CP.
5. Clean the assembly with alcohol.
Mechanical Information
1 10
29
38
47
56
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2814: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2814-CP.PDF ] | |
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