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PDF TGA2813-CP Data sheet ( Hoja de datos )
| Número de pieza | TGA2813-CP | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Radar
TGA2813-CP
3.1 to 3.6 GHz, 100W GaN Power Amplifier
Product Features
Frequency Range: 3.1 – 3.6 GHz
Pout: 50 dBm (at PIN = 27 dBm)
Power Gain: 23 dB (at PIN = 27 dBm)
PAE: 51 % CW
Bias: VD = 30 V pulsed (PW = 15 ms, DC = 30 %),
IDQ = 300 mA, VG = -3 V Typical
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1
2
3
4
5
10
9
8
7
6
General Description
TriQuint’s TGA2813-CP is a packaged high-power
S-Band amplifier fabricated on TriQuint’s TQGaN25
0.25um GaN on SiC process. Operating from 3.1 to 3.6
GHz, the TGA2813-CP achieves 100 W saturated output
power, a power-added efficiency of >50%, and 23 dB
power gain.
The TGA2813-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under both short and long pulsed
conditions. Both RF ports are internally DC blocked and
matched to 50 ohms allowing for simple system
integration.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2813-CP
ECCN Description
3A001.b.2.a
3.1 – 3.6 GHz, 100 W
GaN Power Amplifier
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2813-CP
3.1 to 3.6 GHz, 100W GaN Power Amplifier
Typical Performance: Small Signal
Conditions unless otherwise specified: VD = 30 V (PW = 15 ms, DC = 30 %), IDQ = 300 mA, VG = -3 V typical.
0 Output Return Loss vs. Frequency vs. VD
-3
-6
-9
-12
-15
-18
-21
-24
-27 Temp = 25 °C, CW
28 V
30 V
32 V
-30
2.50 2.75 3.00 3.25 3.50 3.75 4.00
Frequency (GHz)
0 Output Return Loss vs. Frequency vs. IDQ
-3
-6
-9
-12
-15
-18
-21 150 mA
-24
-27 Temp = 25 °C, CW
300 mA
600 mA
-30
2.50 2.75 3.00 3.25 3.50
Frequency (GHz)
3.75
4.00
Output Return Loss vs. Freq. vs. Temp.
0
-3
-6
-9
-12
-40 °C
-15 25 °C
-18 85 °C
-21
-24
-27
CW
-30
2.50 2.75 3.00 3.25 3.50 3.75 4.00
Frequency (GHz)
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2813-CP
3.1 to 3.6 GHz, 100W GaN Power Amplifier
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGA2813-CP to the board.
3. To improve the thermal and RF performance, we recommend the following:
a. Apply thermal compound or 4 mils indium shim between the package and the board.
b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim
between the heat sink and the board.
4. Apply solder to each pin of the TGA2813-CP.
5. Clean the assembly with alcohol.
Mechanical Information
1 10
29
38
47
56
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2813: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2813-CP.PDF ] | |
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