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Número de pieza | TGA2752-SM | |
Descripción | Power Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGA2752-SM (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! Applications
Point-to-Point Radio
Linear C-band Sat-Com
Product Features
Frequency Range: 7.1 – 8.5 GHz
Power: 40 dBm Psat
Gain: 28 dB
TOI: 48 dBm at 30 dBm/tone
Integrated Power Detector
Bias: Vd1 = Vd2 = 6 V, Id1 + Id2 = 1000 mA, Vd3
= 28V, Id3 = 190mA
Package Dimensions: 7.0 x 9.0 x 0.9 mm
General Description
The TriQuint TGA2752-SM is a C-Band Power
Amplifier with integrated power detector. The
TGA2752-SM operates from 7.1 – 8.5 GHz and is
designed using TriQuint’s power GaAs pHEMT and
GaN HEMT production processes.
The TGA2752-SM typically provides 40 dBm of
saturated output power with small signal gain of 28
dB. Third Order Intercept is 48 dBm at 30 dBm SCL.
The TG2752-SM is available in a low-cost, surface
mount 42 lead 7x9 QFN package and is ideally
suited for Point-to-Point Radio.
Lead-free and RoHS compliant
TGA2752-SM
7.1 – 8.5 GHz Power Amplifier
TriQuint
TGA2752-SM
W1430015
C012
42 lead 7x9mm QFN package
Functional Block Diagram
42 41 40 39 38 37 36 35 34 33 32 31
1 30
2 29
3 28
4 27
5 26
6 25
7 24
8 23
9 22
10 11 12 13 14 15 16 17 18 19 20 21
Pin Configuration
Pin No.
Label
1, 2, 3, 4, 6, 7, 8, 9,11, 13,
15, 16, 17, 18, 19, 21, 22,
23, 24, 25, 27, 28, 29, 33,
NC
34, 35, 37, 39, 41
5 RF IN
10, 42
Vg12
12, 40
14, 38
20, 32
Vd1
Vd2
Vd3
26 RF OUT
30 Vref
31 Vdet
36 Vg3
Datasheet: Rev - 11-21-14
© 2014 TriQuint
Ordering Information
Part No. ECCN
Description
TGA2752-SM 3A001.b.2.b.2 7.1-8.5GHz 10W Amp
Standard T/R size = 500 pieces on a 7” reel
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page TGA2752-SM
7.1 – 8.5 GHz Power Amplifier
Specifications
Thermal and Reliability Information (Final Stage)
Parameter
Conditions
Rating
Thermal Resistance, θJC, measured to back of package
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C
Vd_final = 28 V, Id_final = 190
mA
Pdiss_final = 5.3 W
θJC_final = 8.2 °C/W
Tch_final = 129 °C
Tm_final = 2.01E+10
Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
at 34 dBm Pout
Vd_final = 28 V, Id_final = 400
mA
Pdiss_final = 11.2 W
Tch_final = 177 °C
Tm_final = 1.07E+8
Hours
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET13
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature (°C)
Datasheet: Rev - 11-21-14
© 2014 TriQuint
- 5 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page Application Circuit
TGA2752-SM
7.1 – 8.5 GHz Power Amplifier
Vd1, Vd2
Vg3
Vd3
Vg12
Vg12
42 41 40 39 38 37 36 35 34 33 32 31
1
2
3
4
5 TGA2752-SM
6
7
8
9
30
29
28
27
26
25
24
23
22
10 11 12 13 14 15 16 17 18 19 20 21
Vd1, Vd2
Vd3
Vg12 can be biased from either side (pin 10 or pin 42), and the non-biased side can be left open.
Vd1, Vd2, and Vd3 must be biased from both sides.
Bias-up Procedure
Vg12 set to -1.5 V
Vg3 set to -3.5 V
Vd1, Vd2 set to 6 V
Vd3 set to 28 V
Adjust Vg12 more positive until quiescent Id is 1000 mA.
This will be ~ Vg = -0.65 V typical
Adjust Vg3 more positive until quiescent Id is 190 mA.
This will be ~ Vg = -2.6 V typical
Apply RF signal
Bias-down Procedure
Turn off RF signal
Reduce Vg12 to -1.5V. Ensure Id ~ 0 mA
Reduce Vg3 to -3.5V. Ensure Id ~ 0 mA
Turn Vd1, Vd2, Vd3 to 0 V
Turn Vg12, Vg3 to 0 V
Datasheet: Rev - 11-21-14
© 2014 TriQuint
- 11 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet TGA2752-SM.PDF ] |
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