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PDF TGA2625 Data sheet ( Hoja de datos )
| Número de pieza | TGA2625 | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Radar
Communications
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Product Features
Frequency Range: 10 – 11GHz
PSAT: 43dBm @ PIN = 15dBm
P1dB: >40dBm
PAE: >42% @ PIN = 15dBm
Large Signal Gain: 28dB
Small Signal Gain: 37dB
Return Loss: >11dB
Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical
Pulsed VD: PW = 100us and DC = 10%
Chip Dimensions: 5.0 x 2.62 x 0.10 mm
Functional Block Diagram
2 3 45
16
10 9 8 7
General Description
TriQuint’s TGA2625 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2625 operates from 10–
11GHz and provides a superior combination of power,
gain and efficiency. Achieving 20W of saturated output
power with 28dB of large signal gain and greater than
42% power-added efficiency, the TGA2625 provides the
level of performance demanded by today’s system
architectures. Depending on the system requirements,
the TGA2625 can support cost saving initiatives on
existing systems while supporting next generation
systems with increased performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2625
ECCN Description
3A001.b.2.b
10 – 11GHz 20W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (Pulsed Opeartion)
Output Power vs. Frequency vs. VD
45
Temp. = +25 C
PIN = 15dBm
43
41
39
37
35
33
9
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 365mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5
Frequency (GHz)
12
PAE vs. Frequency vs. VD
50
Temp. = +25 C
PIN = 15dBm
45
40
35
30
25
20
9
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 365mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5 12
Frequency (GHz)
Output Power vs. Frequency vs. ID
45
Temp. = +25 C
VD = 28V
PIN = 15dBm
43
41
39
37
35
33
9
145mA
365mA
725mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5
Frequency (GHz)
12
50 PAE vs. Frequency vs. ID
Temp. = +25 C
PIN = 15dBm
45
40
145mA
35 365mA
725mA
30
25
20
9
VD = 28V
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5
Frequency (GHz)
12
Output Power vs. Frequency vs. Temp.
45
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
43
41
39
37
35
33
9
-40C
+25C
+85C
PIN = 15dBm
9.5 10 10.5 11 11.5 12
Frequency (GHz)
PAE vs. Frequency vs. Temperature
50
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
45
40
35
30
25
20
9
-40C
+25C
+85C
PIN = 15dBm
9.5 10 10.5 11 11.5 12
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
Notes:
1. 100uF/100V charge storage cap is needed on the drain. For pulsed operation this cap must be on the supply-side of
the pulse-modulator.
Bill of Materials
Reference Design
C1 – C8
C9, C11
C10, C12
R1 – R2
R3 – R4
Value
1000pF
0.1uF
47uF
10Ω
0Ω
Description
SLC, 50V
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Res, 0402
Res, 0402
Manufacturer
Various
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGA2625.PDF ] | |
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