DataSheet.es    


PDF TGA2625-CP Data sheet ( Hoja de datos )

Número de pieza TGA2625-CP
Descripción GaN Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de TGA2625-CP (archivo pdf) en la parte inferior de esta página.


Total 15 Páginas

No Preview Available ! TGA2625-CP Hoja de datos, Descripción, Manual

Applications
Radar
Communications
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Product Features
Frequency Range: 10 11 GHz
Pout: 42.5 dBm (at PIN = 15 dBm)
PAE: > 40 %
Power Gain: 28 dB (at PIN = 15 dBm)
Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical,
pulsed (PW = 100 µs, DC = 10 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1
2
3
4
5
10
9
8
7
6
General Description
TriQuint’s TGA2625-CP is a packaged high-power
X-Band amplifier fabricated on TriQuint’s TQGaN25
0.25 um GaN on SiC process. Operating from 10 to
11 GHz, the TGA2625-CP achieves 42.5 dBm saturated
output power, a power-added efficiency of > 40 %, and
power gain of 28 dB.
The TGA2625-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under CW and pulsed conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2625-CP is ideally suited for both commercial
and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2625-CP
ECCN Description
3A001.b.2.b
10 11 GHz, 17 W
GaN Power Amplifier
Preliminary Datasheet: 11-03-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com

1 page




TGA2625-CP pdf
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
48
46
44
42
40
38
36
34
32
30
9.5
PAE vs. Frequency vs. VD
25 V
28 V
30 V
32 V
10.0
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
10.5 11.0
Frequency (GHz)
11.5
30 Power Gain vs. Frequency vs. VD
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
29
28
27
25 V
26 28 V
30 V
25 32 V
24
9.5
10.0 10.5 11.0
Frequency (GHz)
11.5
PAE vs. Frequency vs. Temperature
48
46
44
42
40
38 -40 °C
36 25 °C
85 °C
34
32 PW = 100 µs, DC = 10 %,
PIN = 15 dBm
30
9.5 10.0 10.5
Frequency (GHz)
11.0
11.5
Power Gain vs. Frequency vs. Temperature
30
PW = 100 µs, DC = 10 %,
PIN = 15 dBm
29
28
27
-40 °C
25 °C
26 85 °C
25
24
9.5
10.0
10.5
11.0
Frequency (GHz)
11.5
PAE vs. Input Power vs. Temperature
46
45
44
43
42
-40 °C
41 25 °C
85 °C
40
39
38
10
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
12 14
PIN (dBm)
16
Power Gain vs. Input Power vs. Temp.
35
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
32
29
-40 °C
26
25 °C
85 °C
23
20
10
12 14
PIN (dBm)
16
Preliminary Datasheet: 11-03-14
© 2014 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com

5 Page





TGA2625-CP arduino
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Small Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Gain vs. Frequency vs. Temperature
45
42
39
36
33
-40 °C
30
25 °C
27 85 °C
24
21
9.5
VD = 28 V, CW
10.0
10.5
11.0
Frequency (GHz)
11.5
Gain vs. Frequency vs. Drain Current
45
42
39
36
33
30
27
24
21
9.5
365 mA
145 mA
VD = 28 V, CW
10.0
10.5
11.0
Frequency (GHz)
11.5
Input Return Loss vs. Frequency vs. Temp.
0
-3
-6
-9 -40 °C
-12 25 °C
-15 85 °C
-18
-21
-24
-27
-30
9.5
VD = 28 V, CW
10.0
10.5
11.0
Frequency (GHz)
11.5
IRL vs. Frequency vs. Drain Current
0
-3
-6
-9
-12
-15
-18
-21
365 mA
-24 145 mA
-27
-30
9.5
VD = 28 V, CW
10.0 10.5 11.0
Frequency (GHz)
11.5
Output Return Loss vs. Freq. vs. Temp.
0
-3 VD = 28 V, CW
-6
-9
-12
-15
-18
-21 -40 °C
-24 25 °C
-27 85 °C
-30
9.5
10.0
10.5
11.0
Frequency (GHz)
11.5
ORL vs. Frequency vs. Drain Current
0
-3
-6
-9
-12
-15
365 mA
-18 145 mA
-21
-24
-27
-30
9.5
VD = 28 V, CW
10.0 10.5 11.0
Frequency (GHz)
11.5
Preliminary Datasheet: 11-03-14
© 2014 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com

11 Page







PáginasTotal 15 Páginas
PDF Descargar[ Datasheet TGA2625-CP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
TGA2625-CPGaN Power AmplifierTriQuint Semiconductor
TriQuint Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar