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PDF TGA2623 Data sheet ( Hoja de datos )
| Número de pieza | TGA2623 | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
X-band radar
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Product Features
Frequency Range: 10 – 11GHz
PSAT: 45.5dBm @ PIN = 18dBm
P1dB: 41dBm @ Midband
PAE: >47% @ PIN = 18dBm
Large Signal Gain: 27.5dB
Small Signal Gain: 35dB
Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical
Pulsed VD: PW = 100us and DC = 10%
Chip Dimensions: 5.0 x 4.86 x 0.10 mm
Functional Block Diagram
2 3 45
16
10 9 8 7
General Description
TriQuint’s TGA2623 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2623 operates from 10 –
11GHz and provides a superior combination of power,
gain and efficiency. Achieving 35W of saturated output
power with 27.5dB of large signal gain and 47% power-
added efficiency, the TGA2623 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2623
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2623
ECCN Description
3A001.b.2.b
10 – 11GHz 35W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Typical Performance (Pulsed Opeartion)
Output Power vs. Frequency vs. VD
48
Temp. = +25 C
PIN = 18dBm
46
44
42
40
38
36
9
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 290mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5 12
Frequency (GHz)
PAE vs. Frequency vs. VD
55
Temp. = +25 C
PIN = 18dBm
50
45
40
35
30
25
9
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 290mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5 12
Frequency (GHz)
Output Power vs. Frequency vs. ID
48
Temp. = +25 C
VD = 28V
PIN = 18dBm
46
44
42 290mA
40 725mA
38
36
9
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5
Frequency (GHz)
12
55 PAE vs. Frequency vs. ID
Temp. = +25 C
VD = 28V
PIN = 18dBm
50
45
40
35
30
25
9
290mA
725mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5
Frequency (GHz)
12
Output Power vs. Frequency vs. Temp.
47
PIN = 18dBm
45
43
41
39
37
35
9
+25C
+85C
VD = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
9.5 10 10.5 11 11.5
Frequency (GHz)
12
PAE vs. Frequency vs. Temperature
55
VD = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
50
45
40
35
30
25
9
+25C
+85C
PIN = 18dBm
9.5 10 10.5 11 11.5 12
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2623
10 – 11GHz 35W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
Notes:
1. 100uF/100V charge storage cap is needed on the drain. For pulsed operation this cap must be on the supply-side of
the pulse-modulator.
Bill of Materials
Reference Design
C1 – C8
C9, C11
C10, C12
R1 – R2
R3 – R4
Value
1000pF
0.1uF
47uF
10Ω
0Ω
Description
SLC, 50V
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Res, 0402
Res, 0402
Manufacturer
Various
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGA2623.PDF ] | |
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