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PDF TGA2622 Data sheet ( Hoja de datos )

Número de pieza TGA2622
Descripción GaN Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGA2622 Hoja de datos, Descripción, Manual

Applications
Weather and Marine Radar
TGA2622
9 10GHz 40W GaN Power Amplifier
Product Features
Frequency Range: 9 10GHz
PSAT: 46dBm @ PIN = 18dBm
P1dB: >40dBm
PAE: >46% @ PIN = 18dBm
Large Signal Gain: 28dB
Small Signal Gain: 32dB
Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical
Pulsed VD: PW = 100us and DC = 10%
Chip Dimensions: 5.0 x 4.86 x 0.10 mm
Functional Block Diagram
2 3 45
16
10 9 8 7
General Description
TriQuint’s TGA2622 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2622 operates from 9 10GHz
and provides a superior combination of power, gain and
efficiency. Achieving 40W of saturated output power with
28dB of large signal gain and 45% power-added
efficiency, the TGA2622 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2622
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2622
ECCN Description
3A001.b.2.b
9 10GHz 40W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com

1 page




TGA2622 pdf
TGA2622
9 10GHz 40W GaN Power Amplifier
Typical Performance (Pulsed Opeartion)
Output Power vs. Frequency vs. VD
48
Temp. = +25 C
PIN = 18dBm
46
44
42
40
38
36
8
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 290mA
Pulsed: PW=100us, DC=10%
8.5 9 9.5 10 10.5
Frequency (GHz)
11
55 PAE vs. Frequency vs. VD
Temp. = +25 C
PIN = 18dBm
50
45
40
35
30
25
8
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 290mA
Pulsed: PW=100us, DC=10%
8.5 9 9.5 10 10.5 11
Frequency (GHz)
Output Power vs. Frequency vs. ID
48
Temp. = +25 C
VD = 28V
PIN = 18dBm
46
44
42 290mA
725mA
40
38
36
8
Pulsed: PW=100us, DC=10%
8.5 9 9.5 10 10.5
Frequency (GHz)
11
55 PAE vs. Frequency vs. ID
Temp. = +25 C
VD = 28V
PIN = 18dBm
50
45
40
35
30
25
8
290mA
725mA
Pulsed: PW=100us, DC=10%
8.5 9 9.5 10 10.5
Frequency (GHz)
11
Output Power vs. Frequency vs. Temp.
48
VD = 28V, IDQ = 290mA Pulsed: PW=100us, DC=10%
46
44
42
40
38
36
8
+25C
+85C
PIN = 18dBm
8.5 9 9.5 10 10.5 11
Frequency (GHz)
PAE vs. Frequency vs. Temperature
55
VD = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
50
45
40 +25C
35 +85C
30
PIN = 18dBm
25
8 8.5 9 9.5 10 10.5 11
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com

5 Page





TGA2622 arduino
TGA2622
9 10GHz 40W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
Notes:
1. 100uF/100V charge storage cap is needed on the drain. For pulsed operation this cap must be on the supply-side of
the pulse-modulator.
Bill of Materials
Reference Design
C1 C8
C9, C11
C10, C12
R1 R2
R3 R4
Value
1000pF
0.1uF
47uF
10Ω
0Ω
Description
SLC, 50V
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Res, 0402
Res, 0402
Manufacturer
Various
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com

11 Page







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