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PDF TGA2622-CP Data sheet ( Hoja de datos )
| Número de pieza | TGA2622-CP | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Weather and Marine Radar
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Product Features
Frequency Range: 9 – 10 GHz
PSAT: 45.5 dBm @ PIN = 18 dBm
PAE: >43% @ PIN = 18 dBm
Power Gain: 27.5 dB @ PIN = 18 dBm
Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical
(Pulsed VD: PW = 100 us and DC = 10 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1 10
29
38
47
56
General Description
TriQuint’s TGA2622-CP is a packaged, high power X-
band amplifier fabricated on TriQuint’s TQGaN25 0.25 um
GaN on SiC production process. Operating from 9 – 10
GHz, the TGA2622-CP achieves 35 W saturated output
powers, a power-added efficiency of greater than 43 %,
and power gain of 27.5 dB.
The TGA2622-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages and
performs well under both pulsed and CW conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2622-CP is ideally suited for both commercial
and defense applications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RF In
VD
RF Out
Ordering Information
Part
TGA2622-CP
ECCN Description
3A001.b.2.b
9 – 10 GHz 35 W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Typical Performance: Large Signal (Pulsed Operation)
55 PAE vs. Frequency vs. VD
Temp. = +25 C
PIN = 18dBm
50
45
40
35
30
25
8.5
Vd=25V
Vd=28V
Vd=30V
IDQ = 290mA
Pulsed: PW=100us, DC=10%
9 9.5 10 10.5
Frequency (GHz)
Power Gain vs. Frequency vs. VD
30
Temp. = +25 C
29
PIN = 18dBm
28
27
26
25
24
23
8.5
Vd=25V
Vd=28V
Vd=30V
IDQ = 290mA
Pulsed: PW=100us, DC=10%
9 9.5 10
Frequency (GHz)
10.5
PAE vs. Frequency vs. Temperature
55
VD = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
50
45
40
35
30
25
8.5
-40C
+25C
+85C
PIN = 18dBm
9 9.5 10
Frequency (GHz)
10.5
Power Gain vs. Frequency vs. Temp.
30
29 VD = 28V, IDQ = 290mA Pulsed: PW=100us, DC=10%
28
27
26
25
24
23
8.5
-40C
+25C
+85C
PIN = 18dBm
9 9.5 10
Frequency (GHz)
10.5
PAE vs. Input Power vs. Temp.
60
Pulsed: PW=100us, DC=10% VD = 28V, IDQ = 290mA
50
40
30
-40C
20 +25C
10 +85C
Freq. = 9.5 GHz
0
2 4 6 8 10 12 14 16 18 20
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
40
Pulsed: PW=100us, DC=10% VD = 28V, IDQ = 290mA
37
34
31
28
25
22
19
2
-40C
+25C
+85C
Freq. = 9.5 GHz
4 6 8 10 12 14 16 18 20
Input Power (dBm)
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Typical Performance: Small Signal
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Gain vs. Frequency vs. Temperature
39
36
33
30
27
24
21
18
15
8.5
-40C
+25C
+85C
VD = 28 V, IDQ = 290mA
9 9.5 10
Frequency (GHz)
10.5
39
36
33
30
27
24
21
18
15
8.5
Gain vs. Frequency vs. IDQ
290mA
725mA
VD = 28V
9 9.5
Frequency (GHz)
Temp. = +25 C
10 10.5
Input Return Loss vs. Freq. vs. Temp.
0
VD = 28 V, IDQ = 290mA
-5
-10
-15
-20
-25
-30
8.5
-40C
+25C
+85C
9 9.5 10
Frequency (GHz)
10.5
Input Return Loss vs. Freq. vs. IDQ
0
VD = 28 V
-5
-10
-15
-20
-25
-30
8.5
290 mA
725 mA
9
9.5 10
Frequency (GHz)
10.5
Output Return Loss vs. Freq. vs. Temp.
0
VD = 28 V, IDQ = 290mA
-5
-10
-15
-20
-25
-30
8.5
-40C
+25C
+85C
9 9.5 10
Frequency (GHz)
10.5
Output Return Loss vs. Freq. vs. IDQ
0
VD = 28 V
-5
-10
-15
-20 290 mA
-25 725 mA
-30
8.5
9 9.5 10
Frequency (GHz)
10.5
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TGA2622-CP.PDF ] | |
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