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PDF TGA2621-SM Datasheet ( Hoja de datos )

Número de pieza TGA2621-SM
Descripción GaAs Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo

Total 13 Páginas
		
TGA2621-SM Hoja de datos, Descripción, Manual
Applications
Commercial and Military Radar
Satellite Communications
TGA2621-SM
16 18.5 GHz 1 W GaAs Power Amplifier
Product Features
Frequency Range: 16 18.5 GHz
PSAT: >30 dBm at Pin = 10 dBm
PAE: >23 % at Pin = 10 dBm
Small Signal Gain: >24.5 dB
Input Return Loss: > 10 dB
Bias: VD = 6 V, IDQ = 500 mA, VG = -0.6 V
Typical
Package Dimensions: 5.0 x 5.0 x 1.45 mm
Functional Block Diagram
General Description
TriQuint’s TGA2621-SM is a packaged Ku-band Power
Amplifier fabricated on TriQuint’s TQPHT15 0.15 μm
GaAs pHEMT process. The TGA2621-SM operates
from 16 to 18.5 GHz and typically provides greater than
1W of saturated output power with greater than 23%
PAE and greater than 24.5 dB of small signal gain.
The TGA2621-SM is available in a low cost, surface
mount 32 lead 5x5 mm air-cavity ceramic QFN. It is
ideally suited to support both radar and satellite
communications as a driver or low power amplifier.
Both RF ports have integrated DC blocking caps and
are fully matched to 50 ohms allowing for simple
system integration.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
Symbol
1, 2, 4, 6, 8-9,16-17,19, 21, 23-25, 32-33 Gnd
3, 7, 10-15, 18, 22, 26, 28, 30
N/C
5 RFIN
20 RFOUT
27 VD2
29 VD1
31 VG
Ordering Information
Part
ECCN Description
TGA2621-SM EAR99 16 18.5 GHz 1 W GaAs PA
Preliminary Datasheet: Rev - 11-07-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

1 page

TGA2621-SM pdf
TGA2621-SM
16 18.5 GHz 1 W GaAs Power Amplifier
Typical Performance: Large Signal
Output Power vs. Input Power vs. Freq.
33
VD = 6 V, IDQ = 500 mA
30
27
24
16 GHz
21 17 GHz
18 GHz
18
Temp = 25 °C
15
-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power (dBm)
33 Output Power vs. Input Power vs. VD
Temp = 25 °C
IDQ = 500 mA
30
27 5.0 V
5.5 V
24 6.0 V
21
18
Freq = 17 GHz
15
-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
33
VD = 6 V, IDQ = 500 mA
30
27
24 -40 °C
25 °C
85 °C
21
18
Freq = 17 GHz
15
-10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power (dBm)
33
32
31
30
29
28
27
26
25
15
PSAT vs. Frequency vs. Temperature
-40 °C
25 °C
85 °C
VD = 6 V, IDQ = 500 mA
16 17
Frequency (GHz)
PIN = 10 dBm
18
19
33 PSAT vs. Frequency vs. Drain Voltage
Temp. = 25 °C
32
31
30
29
28
27
26
25
15
5.0 V
5.5 V
6.0 V
16
IDQ = 500 mA
17
Frequency (GHz)
PIN = 10 dBm
18
19
PAE vs. Frequency vs. Drain Voltage
34
Temp. = 25 °C
32
30
28
26
24 5.0 V
5.5 V
22 6.0 V
20
18
15
IDQ = 500 mA
PIN = 10 dBm
16 17 18
Frequency (GHz)
19
Preliminary Datasheet: Rev - 11-07-14
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

5 Page

TGA2621-SM arduino
Mechanical Information
TGA2621-SM
16 18.5 GHz 1 W GaAs Power Amplifier
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Ceramic
Lid: Plastic
All metalized features are Au plated
Part is epoxy sealed
Marking:
2621: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Lot ID
Preliminary Datasheet: Rev - 11-07-14
© 2014 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

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