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PDF TGA2612 Data sheet ( Hoja de datos )
| Número de pieza | TGA2612 | |
| Descripción | GaN LNA | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2612 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Applications
Commercial and Military Radar
Communications
TGA2612
6-12 GHz GaN LNA
Product Features
Frequency Range: 6–12GHz
NF: < 1.8dB (1.5dB midband)
P1dB: 20dBm
OTOI: 29dBm
Small Signal Gain: >22dB
Return Loss: >7dB
Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical
Chip Dimensions: 2.1 x 1.5 x 0.10mm
Performance features are typical across frequency, under
recommended bias and at 25°C carrier backside.
Functional Block Diagram
2
J1 1
RF In
3 J2
RF Out
4
General Description
TriQuint’s TGA2612 is a broadband Low Noise
Amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 6–12GHz,
the TGA2612 typically provides P1dB of 20dBm,
greater than 22dB of small signal gain, 1.5dB noise
figure (mid-band) and 29dBm OTOI. In addition to the
high electrical performance, this GaN amplifier also
provides a high level of input power robustness. Able
to survive up to 2W of input power without performance
degradation, TriQuint’s TGA2612 provides flexibility
regarding receive chain protection resulting in lower
costs and reduced board space.
Pad Configuration
Pad No.
1
2
3
4
Symbol
RF In
VD
RF Out
VG
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612 is ideally suited
for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2612
ECCN Description
EAR99 6 – 12 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2612
6-12 GHz GaN LNA
Typical Performance
CCoonnddititoionnssuunnlelesssooththeerwrwisiseessppeeccififeiedd: :VVDD==1100VV,, IIDDQQ == 112050mmAA,, VVGG == --22..33VVTTyyppicicaal l
3 Noise Figure vs. Frequency. vs. VD
Temp. = +25 °C
2.8
IDQ = 100mA
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2 6V 10V 12V 14V 16V 18V 20V
1
5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
3 Noise Figure vs. Frequency vs. IDQ
Temp. = +25 °C
2.8
VD = 10 V
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
5.0
IDQ=60mA IDQ=80mA IDQ=100mA IDQ=120mA IDQ=140mA
6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
32 PSAT vs. Frequency vs. Temperature
VD = 10 V, IDQ = 100 mA
30
28
26
24
22
20
5.0
- 40 °C
+25 °C
+85 °C
6.0 7.0
PIN = 12dBm
8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
32 PSAT vs. Frequency. vs. VD
29
26
23
20
17
Temp. = +25 °C
14
5.0 6.0 7.0
IDQ = 100 mA, PIN = 12dBm
6V
8V
10V
12V
14V
16V
18V
20V
8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
25
VD = 10 V, IDQ = 100 mA
23
21
19
17
15
13
5.0
- 40 °C
+25 °C
+85 °C
6.0 7.0
8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
25 P1dB vs. Frequency. vs. VD
Temp. = +25 °C
22
19
16 6V
8V
13
10V
12V
14V
10 16V
18V
IDQ = 100 mA
20V
7
5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2612
6-12 GHz GaN LNA
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2612.PDF ] | |
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