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PDF TGA2612-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2612-SM | |
| Descripción | GaN LNA | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Commercial and Military Radar
Communications
TGA2612-SM
6 - 12 GHz GaN LNA
Product Features
Frequency Range: 6 – 12 GHz
NF: 2 dB
P1dB: 19 dBm
OTOI: 28 dBm
Small Signal Gain: 22 dB
Return Loss: >7 dB
Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical
Package Dimensions: 4 x 4 x 0.85 mm
Functional Block Diagram
General Description
TriQuint’s TGA2612-SM is a packaged broadband Low
Noise Amplifier fabricated on TriQuint’s TQGaN25
0.25um GaN on SiC process. Covering 6–12 GHz, the
TGA2612-SM typically provides >23 dM small signal
gain, 19 dBm P1dB, and 27 dBm OTOI with <2 dB of
Noise Figure. In addition to the high electrical
performance, this GaN amplifier also provides a high
level of input power robustness. Able to survive up to
2W of input power without performance degradation,
TriQuint’s TGA2612-SM provides flexibility regarding
receive chain protection resulting in lower costs and
reduced board space.
The TGA2612-SM is available in a surface mount 20-
lead 4x4mm QFN. It is ideally suited for both radar and
communications applications.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612-SM is ideally
suited for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1, 2, 4-9, 11, 12, 14,
15, 17-20
3
10
13
16
Symbol
N/C
RFIN
VG
RFOUT
VD
Ordering Information
Part
TGA2612-SM
ECCN
EAR99
Description
6 – 12 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2612-SM
6 - 12 GHz GaN LNA
Typical Performance: Large Signal
CCoonnddititioionnssuunnlelessssootthheerrwwisiseessppeeccififieiedd::VVDD == 1100 VV,, IIDDQQ == 110205 mmAA,, VVGG==--22..33VVTTyyppicicaall
30 PSAT vs. Frequency vs. VD
30 PSAT vs. Frequency vs. Temp.
27 27
24
21 8 V
10 V
12 V
18
15
5
6
PIN = 10 dBm, Temp = 25°C
7 8 9 10 11 12 13
Frequency (GHz)
24
85 °C
21 25 °C
-40 °C
18
PIN = 10 dBm
15
5 6 7 8 9 10 11 12 13
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
30
6 GHz
25 8 GHz
10 GHz
12 GHz
20
15
10
Temp = 25 °C
5
-12 -9 -6 -3 0 3 6 9 12 15 18
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
30
Freq = 10GHz
25
20
15
85 °C
10 25 °C
-40 °C
5
-12 -9 -6 -3 0 3 6 9 12 15 18
Input Power (dBm)
25 P1dB vs. Frequency vs. VD
Temp = 25 °C
23
21
19
12 V
17 10 V
8V
15
6 7 8 9 10 11 12
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
25
23
21
19
17 85 °C
25 °C
-40 °C
15
6 7 8 9 10 11 12
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Evaluation Board
TGA2612-SM
6 - 12 GHz GaN LNA
Gnd
VD
RF In
R1
pin1
C1
R2
C2
R3
RF Out
C3
Gnd
VG
Bill of Material
Reference Des.
C1, C2
C3
R1, R2
R3
Value
0.01 μF
1 μF
0 Ohms
5 Ohms
Description
Cap, 0402, 50 V, 10%, X7R
Cap, 1206, 50 V, 10%, X7R
Res, 0402, 5% (Required for above EVB design)
Res, 0603, 5%
Manuf. Part Number
Various
Various
Various
Various
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGA2612-SM.PDF ] | |
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