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PDF TGA2611 Data sheet ( Hoja de datos )
| Número de pieza | TGA2611 | |
| Descripción | GaN LNA | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Commercial and Military Radar
Satellite Communications
TGA2611
2-6 GHz GaN LNA
Product Features
Frequency Range: 2–6GHz
NF: 1.5dB
OTOI: 32dBm
Small Signal Gain: 25dB
Return Loss: >10dB
P1dB: 22dBm
Bias: VD = 10V, IDQ = 110mA, VG = -2.3V Typical
Chip Dimensions: 2.1 x 1.5 x 0.10mm
Functional Block Diagram
General Description
TriQuint’s TGA2611 is a broadband Low Noise
Amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 2–6GHz,
the TGA2611 typically provides 22dBm P1dB, 25dB of
small signal gain, 1.5dB of noise figure and 32dBm of
OTOI. In addition to the high overall electrical
performance, this GaN amplifier also provides a high
level of input power robustness. Able to survive up to
2W of input power without performance degradation,
TriQuint’s TGA2611 provides flexibility regarding
receive chain protection never before seen with GaAs
technology.
Pad Configuration
Pad No.
1
2
3
4
Symbol
RF In
VD
RF Out
VG
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2611 is ideally suited
for radar and satellite communications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2611
ECCN Description
EAR99 2 – 6 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2013 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2611
2-6 GHz GaN LNA
Typical Performance
CCoonnddititoionnssuunnlelesssooththeerwrwisiseessppeeccififeiedd: :VVDD==1100VV,, IIDDQQ == 112150mmAA,, VVGG == --22..33VVTTyyppicicaal l
3 Noise Figure vs. Frequency. vs. VD
Temp. = +25 °C
VG = -2.3 V
2.5
2 6V
8V
10V
1.5
12V
1
3 Noise Figure vs. Frequency vs. IDQ
Temp. = +25 °C
VD = 10 V
2.5 IDQ=94mA
IDQ=128mA
2 IDQ=148mA
1.5
1
0.5 0.5
0
2.0
3.0 4.0 5.0
Frequency (GHz)
6.0
7.0
0
2.0
3.0 4.0 5.0
Frequency (GHz)
6.0
7.0
30 PSAT vs. Frequency vs. Temperature
VD = 10 V, VG = -2.3 V
29
28
27
- 55 °C
26 +25 °C
+85 °C
25
24
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Frequency (GHz)
30 PSAT vs. Frequency. vs. VD
Temp. = +25 °C
28
26
24
22
6V
8V
20 10V
VG = -2.3 V
12V
18
1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
7.0
30 PSAT vs. Frequency vs. IDQ
Temp. = +25 °C
29
VD = 10 V
28
27
IDQ=94mA
26 IDQ=128mA
IDQ=148mA
25
24
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
25
VD = 10 V, VG = -2.3 V
23
21
- 55 °C
+25 °C
19 +85 °C
17
15
13
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Frequency (GHz)
Preliminary Datasheet: Rev - 01-29-15
© 2013 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2611
2-6 GHz GaN LNA
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Datasheet: Rev - 01-29-15
© 2013 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2611.PDF ] | |
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