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PDF TGA2611-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2611-SM | |
| Descripción | GaN LNA | |
| Fabricantes | TriQuint Semiconductor | |
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Applications
Commercial and Military Radar
Communications
TGA2611-SM
2-6 GHz GaN LNA
Product Features
Frequency Range: 2 – 6 GHz
NF: 1.0 dB
OTOI: 30 dBm at Pout/tone = 18 dBm
Small Signal Gain: 22 dB
Return Loss: >10 dB
P1dB: 18 dBm, PSAT = 26 dBm at PIN = 10 dBm
Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V
Package Dimensions: 4.0 x 4.0 x 0.85 mm
Functional Block Diagram
General Description
TriQuint’s TGA2611-SM is a packaged broadband Low
Noise Amplifier fabricated on TriQuint’s TQGaN25
0.25 um GaN on SiC process. The TGA2611-SM
operates from 2 to 6 GHz and typically provides
>18 dBm P1dB, >22 dB of small signal gain and
30 dBm of OTOI with 1.0 dB NF. In addition to the high
overall electrical performance, this GaN amplifier also
provides a high level of input power robustness which
allows more flexibility in designing the receive chain
circuit protection.
The TGA2611-SM is available in a low cost, surface
mount 20-lead 4x4 mm plastic QFN. It is ideally suited
to support both radar and satellite communication
applications.
Both RF ports have intergraded DC blocking caps and
are fully matched to 50 ohms.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1, 2, 4-9, 11, 12, 14,
15, 17-20
3
10
13
16
Symbol
N/C
RFIN
VG
RFOUT
VD
Ordering Information
Part
ECCN Description
TGA2611-SM
EAR99
2 – 6 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2611-SM
2-6 GHz GaN LNA
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical, CW
30 PSAT vs. Frequency vs. VD
28
26
24
22
8V
20
10 V
18 12 V
16
14
12
PIN = 10 dBm, Temp = 25 °C
10
12345
Frequency (GHz)
6
7
8
30
28
26
24
22
20
18
16
14
12
10
1
PSAT vs. Frequency vs. Temp.
85 °C
25 °C
-40 °C
PIN = 10 dBm
2345678
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
30
28
2 GHz
26 4 GHz
24 6 GHz
22
20
18
16
14
12
10
-15
-10
Temp = 25 °C
-5 0 5 10 15 20
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
30
28 -40 °C
26 25 °C
24 85 °C
22
20
18
16
14
12
10
-15
-10
-5 0 5 10
Input Power (dBm)
4 GHz
15 20
24 P1dB vs. Frequency vs. VD
Temp = 25 °C
23
22
21
20
12 V
19 10 V
8V
18
17
16
2
345
Frequency (GHz)
6
P1dB vs. Frequency vs. Temperature
24
23
22
21
20
19 85 °C
18 25 °C
-40 °C
17
16
2
345
Frequency (GHz)
6
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Evaluation Board
TGA2611-SM
2-6 GHz GaN LNA
Gnd
VD
RF In
R1
pin1
C1
R2
C2
R3
RF Out
C3
Gnd
VG
Bill of Material
Reference Des.
C1, C2
C3
R1, R2
R3
Value
0.01 μF
1 μF
0 Ohms
5 Ohms
Description
Cap, 0402, 50 V, 10%, X7R
Cap, 1206, 50 V, 10%, X7R
Res, 0402, 5% (Required for above EVB design)
Res, 0603, 5%
Manuf.
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGA2611-SM.PDF ] | |
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