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PDF TGA2598 Datasheet ( Hoja de datos )

Número de pieza TGA2598
Descripción GaN Driver Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo

Total 13 Páginas
		
TGA2598 Hoja de datos, Descripción, Manual
Applications
Commercial and military radar
Communications
Electronic Warfare (EW)
TGA2598
6 12GHz 2W GaN Driver Amplifier
Product Features
Frequency Range: 6 12GHz
PSAT: >33dBm
PAE: >31%
Small Signal Gain: >21dB
Input Return Loss: >9dB
Output Return Loss: >11dB
Bias: VD = 25V, IDQ = 100mA, VG = -2.6V Typical
Chip Dimensions: 2.14 x 1.11 x 0.10 mm
Functional Block Diagram
23
14
65
General Description
TriQuint’s TGA2598 is a broadband MMIC driver
amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 6-12GHz,
the TGA2598 provides more than 33dBm of saturated
output power and 21dB of small signal gain while
achieving more than 31% power-added efficiency.
The TGA2598 is an ideal choice to drive TriQuints high
performing x-band GaN HPAs allowing the user to run
both driver and HPA off the same voltage rail.
Fully matched to 50Ω with integrated DC blocking
capacitors on both I/O ports, the TGA2598 is ideally
suited for both military and commercial radar and
communications applications .
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
Symbol
RF In
VD1
VD2
RF Out
VG2
VG1
Ordering Information
Part
TGA2598
ECCN Description
3A001.b.2.b
6 12GHz 2W GaN
Driver Amplifier
Preliminary Datasheet: Rev - 07-11-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

1 page

TGA2598 pdf
Typical Performance (Large Signal)
Output Power vs. Frequency vs. VD
38
36 Temp. = +25 C
PIN = 19dBm
34
32
30
28
26 Vd=10V
24
22
20
18
5
Vd=15V
Vd=20V
Vd=25V
Vd=30V
67
IDQ = 100mA
8 9 10 11 12 13
Frequency (GHz)
TGA2598
6 12GHz 2W GaN Driver Amplifier
PAE vs. Frequency vs. VD
50
45 PIN = 19dBm
40
35
30
25
20
15
10
5 Temp. = +25 C
0
567
Vd=10V
Vd=15V
Vd=20V
Vd=25V
Vd=30V
89
IDQ = 100mA
10 11 12
13
Frequency (GHz)
Output Power vs. Freq vs. Input Power
36
Temp. = +25 C
35
VD = 25V, IDQ = 100mA
34
33
32
31 16dBm
17dBm
30 18dBm
29 19dBm
20dBm
28
5 6 7 8 9 10 11 12 13
Frequency (GHz)
50
45
40
35
30
25
20
15
10
5
0
5
PAE vs. Freq vs. Input Power
Temp. = +25 C
16dBm 17dBm 18dBm 19dBm 20dBm
VD = 25V, IDQ = 100mA
6 7 8 9 10 11 12 13
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
36
35 PIN = 19dBm
34
33
32
31
30
29
28
5
-40C
+25C
+85C
VD = 25V, IDQ = 100mA
6 7 8 9 10 11 12 13
Frequency (GHz)
PAE vs. Frequency vs. Temperature
50
45 PIN = 19dBm
40
35
30
25
20 -40C
15 +25C
10 +85C
5 VD = 25V, IDQ = 100mA
0
5 6 7 8 9 10 11 12 13
Frequency (GHz)
Preliminary Datasheet: Rev - 07-11-14
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

5 Page

TGA2598 arduino
TGA2598
6 12GHz 2W GaN Driver Amplifier
Mechanical Drawing & Bond Pad Description
2
1
6
3
4
5
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad
1
2
3
4
5
6
Symbol
RF In
VD1
VD2
RF Out
VG2
VG1
Pad Size
0.096 x 0.196
0.113 x 0.072
0.104 x 0.072
0.096 x 0.196
0.072 x 0.098
0.072 x 0.098
Description
Input; matched to 50 ohms; DC blocked.
Drain voltage 1, bias network is required; see Application Circuit on page
9 as an example
Drain voltage 2, bias network is required; see Application Circuit on page
9 as an example.
Output; matched to 50 ohms; DC blocked.
Gate voltage 2, bias network is required; see Application Circuit on page 9
as an example.
Gate voltage 1, bias network is required; see Application Circuit on page 9
as an example.
Preliminary Datasheet: Rev - 07-11-14
© 2014 TriQuint
- 11 of 13 -
10 as an exampl
Disclaimer: Subject to change without notice
www.triquint.com

11 Page


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