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PDF TGA2597 Data sheet ( Hoja de datos )
| Número de pieza | TGA2597 | |
| Descripción | GaN Driver Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2597 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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Applications
• Commercial and Military Radar
• Communications
• Electronic Warfare (EW)
TGA2597
2-6 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 2-6 GHz
• Output Power: > 31.5 dBm (PIN = 18 dBm)
• PAE: > 31 % (PIN = 18 dBm)
• Large Signal Gain: > 13.5 dB (PIN = 18 dBm)
• Small Signal Gain: > 24 dB
• VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ.
• Chip Dimensions: 2.140 mm x 1.500 mm x 0.10 mm
Functional Block Diagram
23
J1 1
RF In
4 J2
RF Out
65
General Description
TriQuint's TGA2597 is a driver amplifier fabricated on
TriQuint's TQGaN25 0.25um GaN on SiC production
process. The TGA2597 operates from 2.0 to 6.0 GHz
and provides > 31.5 dBm of output power with > 13.5
dB of large signal gain and > 31 % power-added
efficiency.
The TGA2597 operates with the same drain bias as
corresponding GaN HPA’s making it an ideal driver
amplifier. It can also function as the output amplifier
in lower power applications. The TGA2597 is
internally matched to 50 ohms, and includes
integrated DC blocks on both RF ports allowing for
simple system integration.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
Symbol
RF In
VD1
VD2
RF Out
VG2
VG1
Ordering Information
Part
TGA2597
ECCN Description
EAR99
2-6 GHz GaN Driver
Amplifier
Datasheet: Rev - 10-03-14
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2597
2-6 GHz GaN Driver Amplifier
Typical Performance – Large Signal
Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB
36 Output Power vs. Frequency vs. PIN
34 VD = 25 V, IDQ = 40 mA, Temp. = 25 °C
32
30
28
26
24
22
20
2 dBm
6 dBm
10 dBm
14 dBm
18 dBm
18
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
45 Power Added Eff.vs. Freq. vs. PIN
40 VD = 25 V, IDQ = 40 mA, Temp. = 25 °C
35
30
25
20
15
10
5
2 dBm
6 dBm
10 dBm
14 dBm
18 dBm
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
350 Drain Current vs. Frequency vs. PIN
VD = 25 V, IDQ = 40 mA, Temp. = 25 °C
300
250
200
150
100
50
2 dBm
6 dBm
10 dBm
14 dBm
18 dBm
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
30 Power Gain vs. Frequency vs. PIN
VD = 25 V, IDQ = 40 mA, Temp. = 25 °C
25
20
15
10
2 dBm
6 dBm
10 dBm
14 dBm
18 dBm
5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
36
VD = 25 V, IDQ = 40 mA, PIN = 18 dBm
35
34
33
32
31
30
29
- 40 C +25 C +85 C
28
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
45
40 VD = 25 V, IDQ = 40 mA, PIN = 18 dBm
35
30
25
20
15
10
5 - 40 C +25 C +85 C
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
Datasheet: Rev - 10-03-14
© 2014 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Evaluation Board
TGA2597
2-6 GHz GaN Driver Amplifier
Bill of Materials
Ref. Designation
R7 – R8
C7 – C8
C9 – C12
Value
5.1 Ohm
1.0 uF
0.01 uF
Description
Res, 0402, 5% ROHS
Cap, 1206, 16V, 20%, X5R
Cap, 0402, 50V, 10%, X7R
Manufacturer
Various
Various
Various
Part Number
RF Layer is 0.008” thick Rogers Corp. RO4003C, εr = 3.38. Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5. Die attach is
accomplished with conductive epoxy. The PCB land pattern has been developed to accommodate bond wire and die
tolerances.
Datasheet: Rev - 10-03-14
© 2014 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGA2597.PDF ] | |
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