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PDF TGA2585 Data sheet ( Hoja de datos )
| Número de pieza | TGA2585 | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2585 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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Applications
Commercial and military radar
TGA2585
2.7 – 3.7GHz 18W GaN Power Amplifier
Product Features
Frequency Range: 2.7 – 3.7GHz
PSAT: 42.8dBm at 28V
PAE: 52%
Small Signal Gain: 33dB
Input Return Loss: >15dB
Output Return Loss: >12dB
Bias: VD = 25-32V (CW or Pulsed), IDQ = 225mA, VG
= -2.5V Typical
Pulsed VD: PP = 1ms, DC = 10%
Chip Dimensions: 3.0 x 1.9 x 0.10 mm
Functional Block Diagram
2 34
56
1
J1
RF In
7
J2
RF Out
General Description
TriQuint’s TGA2585 is an S-band MMIC amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process (TQGaN25). Covering 2.7-3.7GHz, the
TGA2585 provides 18W of saturated output power and
33dB of small signal gain while achieving 52% power-
added efficiency. Higher power can be achieved at the
expense of PAE by increasing the drain voltage.
The TGA2585 is ideal for phase array S-band radars
and can support both short pulse and CW conditions.
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50ohms.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1
2
3, 5
4
6
7
Symbol
RF In
VG1
VG2
VD1
VD2
RF Out
Ordering Information
Part
TGA2585
ECCN Description
3A001.b.2.a
2.7 – 3.7GHz 18W
GaN Power Amplifier
Preliminary Datasheet: Rev A 05-12-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2585
2.7 – 3.7GHz 18W GaN Power Amplifier
Typical Performance (Pulsed Operation)
Output Power vs. Frequency vs. VD
45
Temp. = +25°C
PIN = 18dBm
43
41
39
37 Vd=20V
Vd=25V
35 Vd=28V
Vd=32V
33
2.7
2.9
IDQ = 225mA Pulsed: PP = 1ms, DC = 10 %
3.1 3.3
Frequency (GHz)
3.5
3.7
60 PAE vs. Frequency vs. VD
Temp. = +25°C
PIN = 18dBm
56
52
48
Vd=20V
44 Vd=25V
Vd=28V
40 Vd=32V
36
2.7
2.9
IDQ = 225mA Pulsed: PP = 1ms, DC = 10 %
3.1 3.3 3.5 3.7
Frequency (GHz)
Output Power vs. Freq vs. Input Power
44.0
Temp. = +25°C
VD = 28V, IDQ = 225mA
43.5
43.0
42.5
42.0
41.5
41.0
2.6
17dBm
18dBm
19dBm
20dBm
Pulsed: PP = 1ms, DC = 10 %
2.8 3 3.2
Frequency (GHz)
3.4
3.6
PAE vs. Frequency vs. Input Power
60
Temp. = +25°C
VD = 28V, IDQ = 225mA
58
56
54
52
50
48
2.6
17dBm
18dBm
19dBm
20dBm
2.8
Pulsed: PP = 1ms, DC = 10 %
3 3.2
Frequency (GHz)
3.4
3.6
Output Power vs. Freq vs. Input Power
44.0
Temp. = +85°C
VD = 28V, IDQ = 225mA
43.5
43.0
42.5
42.0
41.5
41.0
2.6
17dBm
18dBm
19dBm
20dBm
2.8
Pulsed: PP = 1ms, DC = 10 %
3 3.2
Frequency (GHz)
3.4
3.6
PAE vs. Frequency vs. Input Power
56
Temp. = +85°C
VD = 28V, IDQ = 225mA
54
52
50
48
46
44
2.6
17dBm
18dBm
19dBm
20dBm
Pulsed: PP = 1ms, DC = 10 %
2.8 3 3.2
Frequency (GHz)
3.4
3.6
Preliminary Datasheet: Rev A 05-12-14
© 2014 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Application Circuit
TGA2585
2.7 – 3.7GHz 18W GaN Power Amplifier
C3
0.01 uF
R1
10 Ohms
C4
10 uF
R2
10 Ohms
C5
0.01 uF
C3
1000 pF
VG = -2.5V
Typical
VD = 28V,
IDQ = 225mA
C3
1000 pF
2 34
56
1
J1
RF In
7
J2
RF Out
Bias-up Procedure
1. Set ID limit to 1.5A, IG limit to 8mA
2. Apply -5.0V to VG
3. Apply +28V to VD
4. Adjust VG more positive until IDQ = 225mA (VG ~ -2.5
V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
Preliminary Datasheet: Rev A 05-12-14
© 2014 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TGA2585.PDF ] | |
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