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PDF TGA2583 Data sheet ( Hoja de datos )
| Número de pieza | TGA2583 | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Commercial and military radar
TGA2583
2.7 – 3.7GHz 10W GaN Power Amplifier
Product Features
Frequency Range: 2.7 – 3.7GHz
PSAT: 40.5dBm at 25V
PAE: 54%
Small Signal Gain: 33dB
Input Return Loss: >18dB
Output Return Loss: >12dB
Bias: VD = 25-32V (CW or Pulsed), IDQ = 175mA, VG
= -2.3V Typical
Pulsed VD: PP = 1ms, DC = 10%
Chip Dimensions: 3.0 x 1.9 x 0.10 mm
Functional Block Diagram
2 34
56
1
J1
RF In
7
J2
RF Out
General Description
TriQuint’s TGA2583 is an S-band MMIC amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process (TQGaN25). Covering 2.7-3.7GHz, the
TGA2583 provides 10W of saturated output power and
33dB of small signal gain while achieving 54% power-
added efficiency. Higher power can be achieved at the
expense of PAE by increasing the drain voltage.
The TGA2583 is ideal for phase array S-band radars
and can support both short pulse and CW conditions.
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50ohms.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1
2
3, 5
4
6
7
Symbol
RF In
VG1
VG2
VD1
VD2
RF Out
Ordering Information
Part
TGA2583
ECCN
EAR99
Description
2.7 – 3.7GHz 10W
GaN Power Amplifier
Preliminary Datasheet: Rev B 02-20-15
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2583
2.7 – 3.7GHz 10W GaN Power Amplifier
Typical Performance (Pulsed Operation)
Output Power vs. Frequency vs. VD
44
Temp. = +25°C
PIN = 16dBm
42
40
38
36
34
32
2.7
Vd=20V
Vd=25V
Vd=28V
Vd=32V
2.9
IDQ = 175mA Pulsed: PP = 1ms, DC = 10 %
3.1 3.3
Frequency (GHz)
3.5
3.7
60 PAE vs. Frequency vs. VD
Temp. = +25°C
PIN = 16dBm
57
54
51
48
45
42
2.7
Vd=20V
Vd=25V
Vd=28V
Vd=32V
2.9
IDQ = 175mA
Pulsed: PP = 1ms, DC = 10 %
3.1 3.3
Frequency (GHz)
3.5
3.7
Output Power vs. Freq vs. Input Power
44
Temp. = +25°C
VD = 25V, IDQ = 175mA
42
40
38
36
34
32
2.6
14dBm
15dBm
16dBm
17dBm
2.8
Pulsed: PP = 1ms, DC = 10 %
3 3.2
Frequency (GHz)
3.4
3.6
PAE vs. Frequency vs. Input Power
60
Pulsed: PP = 1ms, DC = 10 % VD = 25V, ID = 175mA
58
56
54
52
50
48
2.6
14dBm
15dBm
16dBm
17dBm
Temp. = +25°C
2.8 3 3.2 3.4
Frequency (GHz)
3.6
Output Power vs. Freq vs. Input Power
44
Temp. = +85°C
VD = 25V, IDQ = 175mA
42
40
38
36
34
32
2.6
14dBm
15dBm
16dBm
17dBm
2.8
Pulsed: PP = 1ms, DC = 10 %
3 3.2
Frequency (GHz)
3.4
3.6
PAE vs. Frequency vs. Input Power
60
Temp. = +85°C
VD = 25V, ID = 175mA
57
54
51
48
45
Pulsed: PP = 1ms, DC = 10 %
42
2.6 2.8 3 3.2
Frequency (GHz)
17dBm
16dBm
15dBm
14dBm
3.4 3.6
Preliminary Datasheet: Rev B 02-20-15
© 2014 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Application Circuit
TGA2583
2.7 – 3.7GHz 10W GaN Power Amplifier
C3
0.01 uF
R1
10 Ohms
C4
10 uF
R2
10 Ohms
C5
0.01 uF
C3
1000 pF
VG = -2.3V
Typical
VD = 25V,
IDQ = 175mA
C3
1000 pF
2 34
56
1
J1
RF In
7
J2
RF Out
Bias-up Procedure
1. Set ID limit to 1.2A, IG limit to 8mA
2. Apply -5.0V to VG
3. Apply +25V to VD
4. Adjust VG more positive until IDQ = 175mA (VG ~ -2.3
V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
Preliminary Datasheet: Rev B 02-20-15
© 2014 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TGA2583.PDF ] | |
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