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Número de pieza | L8721P | |
Descripción | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
Fabricantes | Polyfet RF Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de L8721P (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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L8721P
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
15.0 Watts Single Ended
Package Style S08 P
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
60 Watts
Junction to
Case Thermal
Resistance
o
2.50 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
150 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
8.0 A
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 15.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
11
45
dB Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
% Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
40 V Ids = 0.20 mA, Vgs = 0V
2.0 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.20 A, Vgs = Vds
gM Forward Transconductance
1.7 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.40
Ohm
Vgs = 20V, Ids = 8.00 A
Idsat
Saturation Current
13.00
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
50.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss Common Source Feedback Capacitance
2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
40.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 12/12/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet L8721P.PDF ] |
Número de pieza | Descripción | Fabricantes |
L8721P | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | Polyfet RF Devices |
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