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PDF RJF0609JSP Data sheet ( Hoja de datos )

Número de pieza RJF0609JSP
Descripción Silicon N Channel Thermal FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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Preliminary Datasheet
RJF0609JSP
60V - 1.5V Silicon N Channel Thermal FET
Power Switching
R07DS1066EJ0100
Rev.1.00
May 10, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
High density mounting
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
1 234
2 Current
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
78
4
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
56
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
MOS1
1
MOS2
3
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
1.5
1.5
9.6
1
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
3. Tch = 25°C, Rg 50 Ω
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 1 of 7

1 page




RJF0609JSP pdf
RJF0609JSP
Preliminary
Forward transfer admittance vs.
Drain Current
10
Shutdown Case Temperature vs.
Gate to Source Voltage
200
Ta = –40°C
25°C
1 150°C
180
160
140
0.1
0.1
VDS = 10 V
Pulse Test
1 10
Drain Current ID (A)
120
ID = 0.2 A
100
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
0.0001
10 μ
100 μ
1m
θch-f(t) = γs (t) · θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
10
D=1
1 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 μ
100 μ
1m
θch-f(t) = γs (t) · θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Page 5 of 7

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