DataSheet.es    


PDF RJF0606JPE Data sheet ( Hoja de datos )

Número de pieza RJF0606JPE
Descripción Silicon N Channel Thermal FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de RJF0606JPE (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! RJF0606JPE Hoja de datos, Descripción, Manual

Target Specifications Datasheet
RJF0606JPE
60V-40A Silicon N Channel Thermal FET
Power Switching
R07DS0580EJ0300
Rev.3.00
May 15, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
2,4
1. Gate
2. Drain
3. Source
4. Drain
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
VGSS
ID Note3
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg 50 Ω
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
40
40
12
617
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 1 of 7

1 page




RJF0606JPE pdf
RJF0606JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8 24 V VDD = 16 V
6
4
2
0
10
100
1000
10000
Shutdown Time of Load-Short Test Pw (μS)
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
ID = 5 A
100
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
R07DS0580EJ0300 Rev.3.00
May 15, 2013
Page 5 of 7

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet RJF0606JPE.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RJF0606JPESilicon N Channel Thermal FETRenesas
Renesas

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar