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PDF SZM-2066Z Data sheet ( Hoja de datos )
| Número de pieza | SZM-2066Z | |
| Descripción | 2W POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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SZM-2066Z
2.4GHz to
2.7GHz 2W
Power Ampli-
SZM-2066Zfier
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
module package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a final or driver stage for 802.16 and
802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V
supply. The external output match and bias adjustability allows load line optimiza-
tion for other applications or over narrower bands. It features an output power
Optimum Technology detector, on/off power control and high RF overdrive robust-
Matching® Applied ness. A 20dB step attenuator feature can be utilized by switch-
GaAs HBT
ing the second stage Power up/down control.
GaAs MESFET
InGaP HBT
Vcc = 5V
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
RFIN
RFOUT
Si BJT
GaN HEMT
Vbias = 5V
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
InP HBT
RF MEMS
LDMOS
Pow er
Up/Dow n
Control
Pow er
Detector
Features
P1dB= 33.5dBm at 5V
Three Stages of Gain:37dB
802.11g 54Mb/s Class AB Per-
formance
POUT=26dBm at 2.5% EVM, VCC
5V, 690mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control <1s
Attenuator Step 20dB at
VPC2 = 0 V
Applications
802.16 WiMAX Driver or Output
Stage
802.11b/g WiFi, WiFi
Parameter
Specification
Min. Typ.
Frequency of Operation
2500
Output Power at 1dB Compression
32.0
33.5
Small Signal Gain
32.2
33.7
EVM 2.5
Third Order Supression
-45.0
Noise Figure
7.7
Worst Case Input Return Loss
7.5 10.5
Worst Case Output Return Loss
12.5
15.5
Output Voltage Range
0.9 to 1.8
Quiescent Current
454 583
Power Up Control Current
4.0
VCC Leakage Current
Thermal Resistance
12.0
Test Conditions: Z0=50, VCC=5V, IQ=583mA, TBP=30°C
Max.
2700
-40.0
659
100
Unit
MHz
dBm
dB
%
dBc
dB
dB
dB
V
mA
mA
A
°C/W
Condition
2.7 GHz
2.7 GHz
2.7GHz, 802.11g 54Mb/s at POUT=26dBm
2.7GHz, POUT=23dBm per tone
2.7 GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
POUT=10dBm to 33dBm
VCC = 5 V
VPC=5V, IVPC1+ IVPC2+IVPC3
VCC=5V, VPC=0V
junction - lead
DS110620
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 18
1 page  
SZM-2066Z
Measured 2.4GHz to 2.5GHz Application Circuit Data (VCC=VPC=5.0V, IQ=556mA, T=25°C)
Narrowband S11 - Input Return Loss
0
Narrowband S12 - Reverse Isolation
-45
-5 -50
-10 -55
-15 -60
-20 -65
-25 -70
-30
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
-40C
+25C
+85C
-75
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
-40C
+25C
+85C
Narrow band S21 - Forw ard Gain
40
38
36
34
32
30
28
26
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
-40C
+25C
+85C
DC Supply Current vs Pout, T=+25C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
2.4GHz
2.5GHz
Narrowband S22 - Output Return Loss
0
-5
-10
-15
-20
-25
-30
-35
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
-40C
+25C
+85C
DC Supply Current vs Pout, F=2.4GHz
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
-40c +25c +85c
DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 18
5 Page 
SZM-2066Z
Pin
7, 11,
12,
22,
29,
31,
39, 40
1, 10,
21, 30
2
3
4-5
6
8
9
13, 38
14-15
17-18
33-34
36-37
16, 35
19
20
23-28
32
Function
NC
GND
VC1
VBIAS12
R1A-R2A
RFIN
VPC1
VPC2
VC2A, VC2B
C1A-C2A
C3A-C4A
C4B-C3B
C2B-C1B
VB3A, VB3B
VPC3
VDET
RFOUT
VBIAS3
Description
These are no connect (NC) pins and are not wired inside the package. It is recommended to con-nect them as shown in
the application circuit to achieve the stated performance.
These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground
them external to the package to achieve the specified performance.
This is the collector of the first stage.
This is the supply voltage for the active bias circuit of the 1st and 2nd stages.
A resistor is tied across these pins internal to the package.
This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin.
Power up/down control pin for the 1st stage. An external series resistor is required for proper set-ting of bias levels
depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless
the supply current from pin 3 is limited <10mA.
Power up/down control pin for the 2nd stage. Power down VPC2<1V for step attenuator function enable.An external
series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should
never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited <10mA.
These two pins are connected internal to the package and connect to the 2nd stage collector. Toachieve specified perfor-
mance, the layout of these pins should match the Recommended Land Pattern.
These pins have capacitors across them internal to the package as shown in the below schematic. They are used as tun-
ing and RF coupling elements between the 2nd and 3rd stage.
These are the connections to the base of the 3rd stage output device. To achieve specified perfor-mance, the layout of
these pins should match the Recommended Land Pattern.
Power up/down control pin for the 2nd stage. An external series resistor is required for proper setting of bias levels
depending on control voltage. The voltage on this pin should never exceed the voltage on pin 32 by more than 0.5V
unless the supply current from pin 33 is limited <10mA.
This is the output port for the power detector. It samples the power at the input of the 3rd stage.
These are the RF output pins and DC connections to the 3rd stage collector.
This is the supply voltage for the active bias circuit of the 3rd stage.
Part Symbolization
The part will be symbolized with “SZM-2066Z” to designate it as a RoHS green compliant product. Marking designator will be
on the top surface of the package.
DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet SZM-2066Z.PDF ] | |
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