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PDF BC857B Data sheet ( Hoja de datos )

Número de pieza BC857B
Descripción General Purpose Transistors
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BC856B, BC857B, BC858A
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858
VCEO
−65
−45
−30
V
Collector-Base Voltage
BC856
BC857
BC858
VCBO
−80
−50
−30
V
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−5.0
−100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150 mW
883 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX M G
G
1
XX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 4
1
Publication Order Number:
BC856BWT1/D

1 page




BC857B pdf
BC856B, BC857B, BC858A
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1
0.2
0.5
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10 20
50 100
t, TIME (ms)
Figure 13. Thermal Response
200
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
500 1.0 k 2.0 k
5.0 k 10 k
-200
1 s 3 ms
-100
-50 TA = 25°C TJ = 25°C
BC858
-10
BC857
BC856
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate IC−VCE lim-
its of the transistor that must be observed for reliable oper-
ation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) 150°C.
TJ(pk) may be calculated from the data in Figure 13. At
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
ORDERING INFORMATION
Device
Marking
Package
Shipping
BC856BWT1G
SBC856BWT1G*
3B
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
BC857BWT1G
SBC857BWT1G*
3F
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
BC857CWT1G
NSVBC857CWT1G*
3G
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
BC858AWT1G
3J
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
BC858BWT1G
3K
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
www.onsemi.com
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