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PDF SP2108 Data sheet ( Hoja de datos )
| Número de pieza | SP2108 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SP2108 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2108
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
1.2A
811 @ VGS=10V
932 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PDFN 5x6
PIN1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
Single Pulse Avalanche Energy d
Maximum Power Dissipation
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1.2
0.96
5
4
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,11,2014
www.samhop.com.tw
1 page  
SP2108
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit
Figure 12a.
Ver 1.0
V(BR)DSS
tp
IAS
Unclamped Inductive Waveforms
Figure 12b.
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
0.00001
Single Pulse
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01 0.1
1
Square Wave Pulse Duration(sec)
10
100
Figure 13. Normalized Thermal Transient Impedance Curve
1000
Sep,11,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SP2108.PDF ] | |
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