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PDF DMC1029UFDB Data sheet ( Hoja de datos )

Número de pieza DMC1029UFDB
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC1029UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device V(BR)DSS
Q1
N-Channel
12V
Q2
P-Channel
-12V
RDS(ON) max
29mΩ @ VGS = 4.5V
34mΩ @ VGS = 2.5V
44mΩ @ VGS = 1.8V
65mΩ @ VGS = 1.5V
61m@ VGS = -4.5V
81mΩ @ VGS = -2.5V
115mΩ @ VGS = -1.8V
210mΩ @ VGS = -1.5V
ID MAX
TA = +25°C
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
D1 D2
G1 G2
S1 S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMC1029UFDB -7
DMC1029UFDB -13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
2D = Product Type Marking Code
YM = Date Code Marking
2D Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated

1 page




DMC1029UFDB pdf
0.04
0.035
0.03
0.025
VGS=2.5V, ID=3.0A
0.02
0.015
0.01
VGS=4.5V, ID=5.0A
0.005
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Temperature
20
18
16
14
12
10
8
6
4
2
0
0
VGS=0V
TA=150
VGS=0V
TA=125
0.3 0.6
VGS=0V
TA=85
VGS=0V
TA=25
VGS=0V, TA=-55
0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
8
6
VDS=6V, ID=6.5A
4
2
0
0 5 10 15 20
Qg (nC)
Figure 11. Gate Charge
DMC1029UFDB
1
0.9
0.8
0.7
0.6 ID=1mA
0.5
0.4
ID=250μA
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f=1MHz
1000
Ciss
Coss
100
Crss
10
0
2 4 6 8 10
VDS, DRAIN-SOURCE Voltage (V)
Figure 10. Typical Junction Capacitance
12
100
RDS(ON) Limited
10
1 PW=10ms
PW=1ms PW=100μs
PW=100
ms
PW=1s
0.1
0.01
TJ(Max)=150
TA=25
VGS=4.5V
Single Pulse
DUT on
1*MRP Board
PW=10s
DC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
5 of 9
www.diodes.com
February 2015
© Diodes Incorporated

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