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PDF CGHV35400F Data sheet ( Hoja de datos )

Número de pieza CGHV35400F
Descripción GaN HEMT
Fabricantes Cree 
Logotipo Cree Logotipo



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CGHV35400F
400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN:
Package
TCyGpHeV: 43450420105F
Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier
Parameter
2.9 GHz
3.2 GHz
3.5 GHz
Output Power
375 400 360
Gain
9.8 10 9.6
Drain Efficiency
66 59 57
Note:
Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.
Units
W
dB
%
Features
• 2.9 - 3.5 GHz Operation
• 400 W Typical Output Power
• 10.5 dB Power Gain
• 60% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
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CGHV35400F pdf
Typical Performance
FiguCreG3H.V-35C4G00HFVO3u5t4p0ut0PFoOwuetrpvustInPpouwt eProwvserInput Power
VDVDd=d 4=545VV, ,IDIdQ q==550000 mmAA,, PPuullsseeWWididthth=C=50500u0s,µDsu,tDy uCtyyclCey=c1le0 =%,1T0ca%s,eT=ca85se = 85 °C
60
55
50
45
40
35
30
2.9 GHz
3.2 GHz
25 3.5 GHz
20
5
10 15 20 25 30 35 40 45 50
Input Power (dBm)
Figure 4. - CGHV35400F Drain Efficiency & Gain vs Input Power
VDVD d=d4=54V5, VID,QIdC=qG5=H05V0030m54mA0A0, FP, PuDulrslaseienWWEifidfditcthhie==nc55y000&0uGµsas, i,DnDuvutsytyICnCypcuyltcelP=eo1=w0e1%r0,%Tc, aTscea=se85= 85 °C
C
70 16
60 14
50
40 Drain Efficiency - 2.9 GHz
Drain Efficiency - 3.2 GHz
Drain Efficiency - 3.5 GHz
30 Gain - 2.9 GHz
Gain - 3.2 GHz
Gain - 3.5 GHz
20
12
10
8
6
10 4
02
5 10 15 20 25 30 35 40 45 50
Input Power (dBm)
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

5 Page





CGHV35400F arduino
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGHV35400F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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