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PDF CGHV35150 Data sheet ( Hoja de datos )
| Número de pieza | CGHV35150 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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CGHV35150
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier
applications. The transistor is supplied in a ceramic/metal flange and pill package.
PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6
Typical Performance 3.1 - 3.5 GHz (TC = 85˚C)
Parameter
3.1 GHz
3.2 GHz
Output Power
180
180
Gain
13.5 13.5
Drain Efficiency
50
49
3.3 GHz
180
13.5
50
3.4 GHz
170
13.3
49
3.5 GHz
150
12.7
48
Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 dBm
Units
dB
dBc
%
Features:
• Rated Power = 150 W @ TCASE = 85°C
• Operating Frequency = 2.9 - 3.5 GHz
• Transient 100 µsec - 300 µsec @ 20% Duty Cycle
• 13.5 dB Power Gain @ TCASE = 85°C
• 50 % Typical Drain Efficiency @ TCASE = 85°C
• Input Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
1 page  
CGHV35150 Power Dissipation De-rating Curve
Figure 5. - CCGGHHVV335515500FTTrraannssiieent PowweerrDDiissssipipaatitoionnDDe-eR-aRtaintignCguCruverve
140
120
100
80
60
Flange
40 Pill
20
Note 1
0
0
25 50 75 100 125 150 175 200 225
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
CGHV35150-AMP Application Circuit Bill of Materials
250
Designator
R1
R2
C1,C7,C8
C2
C3
C4,C9
C5,C10
C6
C11
C12
C13
J1,J2
J3
J4
W1
Q1
Description
RES, 511 OHM, +/- 1%, 1/16W, 0603
RES, 5.1 OHM, +/- 1%, 1/16W, 0603
CAP, 10pF, +/- 1%, 250V, 0805
CAP, 6.8pF, +/- 0.25 pF,250V, 0603
CAP, 10.0pF, +/-5%,250V, 0603
CAP, 470PF, 5%, 100V, 0603, X
CAP, 33000PF, 0805,100V, X7R
CAP 10uF 16V TANTALUM
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP, 33 UF, 20%, G CASE
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
CONN, SMA, PANEL MOUNT JACK, FL
HEADER RT>PLZ .1CEN LK 9POS
CONNECTOR ; SMB, Straight, JACK,SMD
CABLE ,18 AWG, 4.2
PCB, RO4350, 20 MIL THK, CGHV35150
CGHV35150
Qty
1
1
3
1
1
2
1
1
1
1
1
2
1
1
1
1
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Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CGHV35150.PDF ] | |
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